650V Breakdown Voltage Power MOSFET Miracle Power MPC16N65 Ideal for Switching Mode Power Supplies
Key Attributes
Model Number:
MPC16N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V,8.0A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.43nF
Output Capacitance(Coss):
215pF
Pd - Power Dissipation:
190W
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
MPC16N65
Package:
TO-220
Product Description
Product Overview
The MPC16N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This component is designed for high-efficiency applications, featuring a 650V breakdown voltage, 16A continuous drain current, and a low on-resistance of 0.45 (typ.) at VGS = 10V. It offers fast switching characteristics and is 100% avalanche tested. Ideal for use in adapters, standby power supplies, and switching mode power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPC16N65
- Technology: Miracle Technology
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 650 | V | |||
| Gate-Source Voltage (VGS) | ±30 | V | |||
| Drain Current-Continuous (ID) @ TC = 25°C | 16 | A | |||
| Drain Current-Continuous (ID) @ TC = 100°C | 10.6 | A | |||
| Drain Current-Pulsed (IDM) | 64 | A | |||
| Maximum Power Dissipation (PD) @ TJ = 25°C | 190 | W | |||
| Single Pulsed Avalanche Energy (EAS) | 605 | mJ | |||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | °C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-Case (RθJC) | Max. | 0.66 | °C/W | ||
| Thermal Resistance Junction-Ambient (RθJA) | Max | 62.5 | °C/W | ||
| Electrical Characteristics (TJ = 25°C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250μA | 650 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650V, VGS = 0V | - | - | 1 | μA |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = ±30V | - | - | ±100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250μA | 2 | - | 4 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 8.0A | - | 0.45 | 0.55 | Ω |
| Dynamic Characteristics | |||||
| Forward Transconductance (gfs) | VDS = 15V, ID = 8.0A | 15 | - | - | S |
| Input Capacitance (Ciss) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2430 | - | pF |
| Output Capacitance (Coss) | - | 215 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 18 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 325V, ID = 16A, RG = 25Ω, VGS=10V | - | 28 | - | ns |
| Turn-On Rise Time (tr) | - | 68 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 142 | - | ns | |
| Turn-Off Fall Time (tf) | - | 73 | - | ns | |
| Total Gate Charge (Qg) | VDS = 325V, ID = 16A, VGS = 10V | - | 53 | - | nC |
| Gate-Source Charge (Qgs) | - | 11 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 23 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VGS = 0V | - | - | 16 | A |
| Maximum Pulsed Current (ISM) | VGS = 0V | - | - | 64 | A |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 16A | - | 0.9 | 1.4 | V |
2410122015_MIRACLE-POWER-MPC16N65_C17701993.pdf
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