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quality Nexperia BC817-25 215 NPN transistor designed for switching and amplification in electronic circuits factory
quality Nexperia BC817-25 215 NPN transistor designed for switching and amplification in electronic circuits factory

Nexperia BC817-25 215 NPN transistor designed for switching and amplification in electronic circuits

Key Attributes
Model Number: BC817-25,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC817-25,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia BC817 series comprises NPN general-purpose transistors designed for high current applications. These transistors are available in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. They offer three distinct current gain selections, making them versatile for general-purpose switching and amplification tasks. With a collector-emitter voltage of 45 V and a collector current of 500 mA, the BC817 series provides reliable performance for a wide range of electronic circuits.

Product Attributes

  • Brand: Nexperia
  • Type: NPN General-Purpose Transistor
  • Package Type: SOT23 (TO-236AB)
  • Complementary PNP Transistor: BC807 series

Technical Specifications

Model Package Type Max VCEO (V) Max IC (mA) Min hFE (at 100mA, 1V) Max hFE (at 100mA, 1V) Max VCEsat (mV) (at 500mA, 50mA) Max VBE (V) (at 500mA, 50mA) Min fT (MHz) (at 10mA, 5V)
BC817 SOT23 45 500 100 600 700 1.2 100
BC817-16 SOT23 45 500 100 250 700 1.2 100
BC817-25 SOT23 45 500 160 400 700 1.2 100
BC817-40 SOT23 45 500 250 600 700 1.2 100
Parameter Conditions Min Typ Max Unit
Collector-Emitter Voltage (VCEO) Open base; Tamb = 25 C - - 45 V
Collector Current (IC) Tamb = 25 C - - 500 mA
Peak Collector Current (ICM) Single pulse; tp 1 ms; Tamb = 25 C - - 1 A
Collector-Base Voltage (VCBO) Open emitter; Tamb = 25 C - - 50 V
Emitter-Base Voltage (VEBO) Open collector; Tamb = 25 C - - 5 V
Total Power Dissipation (Ptot) Tamb 25 C (FR4 PCB, 1 cm collector pad) - - 345 mW
Junction Temperature (Tj) - - - 150 C
Storage Temperature (Tstg) - -65 - 150 C
Collector-Base Breakdown Voltage (V(BR)CBO) IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
Collector-Emitter Breakdown Voltage (V(BR)CEO) IC = 10 mA; IE = 0 A; Tamb = 25 C 45 - - V
Emitter-Base Breakdown Voltage (V(BR)EBO) IE = 100 A; IC = 0 A; Tamb = 25 C 5 - - V
Collector Cut-off Current (ICBO) VCB = 20 V; IE = 0 A; Tamb = 25 C - - 100 nA
Collector Cut-off Current (ICBO) VCB = 20 V; IE = 0 A; Tj = 150 C - - 5 A
Emitter Cut-off Current (IEBO) VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
Collector-Emitter Saturation Voltage (VCEsat) IC = 500 mA; IB = 50 mA; Tamb = 25 C - - 700 mV
Base-Emitter Voltage (VBE) IC = 500 mA; IB = 50 mA; Tamb = 25 C - - 1.2 V
Transition Frequency (fT) VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Collector Capacitance (Cc) VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF

2410121938_Nexperia-BC817-25-215_C39828.pdf

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