N Channel Enhancement Mode MOSFET MIRACLE POWER MU3400T with Low Gate Charge and Lead Free Features
Key Attributes
Model Number:
MU3400T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
35mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
43pF
Number:
1 N-channel
Output Capacitance(Coss):
52pF
Input Capacitance(Ciss):
665pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
7nC
Mfr. Part #:
MU3400T
Package:
SOT23
Product Description
Product Overview
The MU3400T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management. It is also lead-free.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
- Environmental: Lead Free
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | Tc = 25C unless otherwise noted | - | - | 30 | V |
| Gate-Source Voltage (VGS) | Tc = 25C unless otherwise noted | - | - | 12 | V |
| Drain Current-Continuous (ID) | TA = 25C | - | - | 5.0 | A |
| Drain Current-Continuous (ID) | TA = 100C | - | - | 3.0 | A |
| Drain Current-Pulsed (IDM) | a | - | - | 20 | A |
| Maximum Power Dissipation (PD) | @ TA = 25C | - | - | 1.2 | W |
| Store Temperature Range (TSTG) | - | -55 | - | 150 | C |
| Thermal Characteristics | |||||
| Thermal Resistance Junction-Ambient (RJA) | Max | - | - | 103 | C/W |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 30 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 30V, VGS = 0V | - | - | 1.0 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 12V | - | - | 100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 0.6 | 0.95 | 1.4 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 4A | - | 28 | 35 | m |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 3A | - | 30 | 38 | m |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 2.5V, ID = 2A | - | 35 | 45 | m |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 15V, VGS = 0V, f = 1.0MHz | - | 665 | - | pF |
| Output Capacitance (Coss) | - | - | 52 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 43 | - | pF |
| Total Gate Charge (Qg) | VGS = 0 to 4.5V, VDS = 15V, ID = 3A | - | 7.0 | - | nC |
| Gate Source Charge (Qgs) | - | - | 1.7 | - | - |
| Gate Drain Charge (Qgd) | - | - | 1.6 | - | - |
| Turn-On Delay Time (td(on)) | VDD=15V, VGS = 4.5V, ID=3A, RGEN=3 | - | 4 | - | ns |
| Turn-Off Rise Time (tr) | - | - | 17 | - | - |
| Turn-Off Delay Time (td(off)) | - | - | 95 | - | - |
| Turn-Off Fall Time (tf) | - | - | 36 | - | - |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | - | - | - | 5 | A |
| Maximum Pulsed Diode Forward Current (ISM) | - | - | - | 20 | A |
| Drain to Source Diode Forward Voltage (VSD) | VGS = 0V, ISD = 5 A | - | 1.2 | - | V |
| Body Diode Reverse Recovery Time (Trr) | di/dt=100A/us, IF=3A | - | 6.7 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | - | - | 2.3 | - | nC |
2411220026_MIRACLE-POWER-MU3400T_C34373739.pdf
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