NPN Transistor Nexperia BC817-25 235 SOT23 Package Ideal for General Purpose Electronic Applications

Name: NPN Transistor Nexperia BC817-25 235 SOT23 Package Ideal for General Purpose Electronic Applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BC817-25,235
Availability: InStock

Key Attributes

Model Number: BC817-25,235

Product Custom Attributes

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

345mW

Transition Frequency(fT):

100MHz

Type:

NPN

Current - Collector(Ic):

500mA

Collector - Emitter Voltage VCEO:

45V

Operating Temperature:

-65℃~+150℃

Mfr. Part #:

BC817-25,235

Package:

SOT-23

Product Description

Product Overview

The Nexperia BC817 series are NPN general-purpose transistors designed for versatile applications. These transistors are housed in a compact SOT23 (TO-236AB) surface-mounted plastic package. They offer high current capabilities and come with three distinct current gain selections, making them suitable for general-purpose switching and amplification tasks. With a collector-emitter voltage of 45 V and a collector current of 500 mA, the BC817 series provides reliable performance for a wide range of electronic circuits.

Product Attributes

Brand: Nexperia
Package Type: SOT23 (TO-236AB)
Transistor Type: NPN
Complementary PNP Type: BC807 series

Technical Specifications

Model	Package Type	Description	VCEO (Max)	IC (Max)	Current Gain Selections
BC817	SOT23 (TO-236AB)	NPN General-Purpose Transistor	45 V	500 mA	100 - 600
BC817-16	SOT23 (TO-236AB)	NPN General-Purpose Transistor	45 V	500 mA	100 - 250
BC817-25	SOT23 (TO-236AB)	NPN General-Purpose Transistor	45 V	500 mA	160 - 400
BC817-40	SOT23 (TO-236AB)	NPN General-Purpose Transistor	45 V	500 mA	250 - 600

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	open base; Tamb = 25 C	-	-	45	V
IC	Collector current	Tamb = 25 C	-	-	500	mA
ICM	Peak collector current	single pulse; tp 1 ms; Tamb = 25 C	-	-	1	A
VCBO	Collector-base voltage	open emitter; Tamb = 25 C	-	-	50	V
VEBO	Emitter-base voltage	open collector; Tamb = 25 C	-	-	5	V
IBM	Peak base current	single pulse; tp 1 ms; Tamb = 25 C	-	-	200	mA
Ptot	Total power dissipation	Tamb 25 C	-	-	250	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A; Tamb = 25 C	50	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 10 mA; IE = 0 A; Tamb = 25 C	45	-	-	V
V(BR)EBO	Emitter-base breakdown voltage	IE = 100 A; IC = 0 A; Tamb = 25 C	5	-	-	V
ICBO	Collector-base cut-off current	VCB = 20 V; IE = 0 A; Tamb = 25 C	-	-	100	nA
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A; Tamb = 25 C	-	-	100	nA
VCEsat	Collector-emitter saturation voltage	IC = 500 mA; IB = 50 mA; Tamb = 25 C	-	-	700	mV
VBE	Base-emitter voltage	VCE = 1 V; IC = 500 mA; Tamb = 25 C	-	-	1.2	V
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C	100	-	-	MHz
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C	-	-	3	pF

Package Information

Package Outline: SOT23 (TO-236AB)

Dimensions (mm):

Length: 2.8 - 3.0
Width: 2.1 - 2.5
Height: 0.9 - 1.4
Lead pitch: 0.38 - 0.48

Soldering Footprint

Refer to Figures 17 and 18 for Reflow and Wave soldering footprints for SOT23 (TO-236AB) package.

2410121938_Nexperia-BC817-25-235_C549433.pdf

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