Power MOSFET MIRACLE POWER MPW03NA5 with 1500V Drain Source Voltage and High Avalanche Energy Rating

Key Attributes
Model Number: MPW03NA5
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5Ω@10V,1.5A
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
12.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.036nF
Pd - Power Dissipation:
32W
Output Capacitance(Coss):
98pF
Gate Charge(Qg):
-
Mfr. Part #:
MPW03NA5
Package:
TO-3PH
Product Description

Product Overview

The MPW03NA5 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This MOSFET features a high breakdown voltage of 1500V and a continuous drain current of 3A, with a low ON resistance of 5 (Typ.) at VGS = 10V. It is designed for fast switching, low gate charge, and offers 100% single pulse avalanche energy testing. Ideal for power switch circuits in adaptors and chargers.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Model: MPW03NA5

Technical Specifications

Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage (VDS) 1500 V
Gate-Source Voltage (VGS) ±30 V
Drain Current-Continuous (ID) @ TC=25°C 3 A
Drain Current-Continuous (ID) @ TC=100°C 1.8 A
Drain Current-Pulsed (IDM) b 12 A
Maximum Power Dissipation (PD) @ TJ=25°C 32 W
Single Pulsed Avalanche Energy (EAS) d 245 mJ
Operating and Store Temperature Range (TJ, TSTG) -55 150 °C
Thermal Characteristics
Thermal Resistance, Junction-Case (RθJC) Max. 3.8 °C/W
Thermal Resistance Junction-Ambient (RθJA) Max. 40 °C/W
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Off Characteristics
Drain-Source Breakdown Voltage (BVDSS) VGS = 0V, ID = 250μA 1500 - - V
Zero Gate Voltage Drain Current (IDSS) VDS = 1500V, VGS = 0V - - 1 μA
Forward Gate Body Leakage Current (IGSS) VDS = 0V, VGS = ±30V - - ±100 nA
On Characteristics
Gate Threshold Voltage (VGS(th)) VDS = VGS, ID =250μA 3 - 5 V
Static Drain-Source On-Resistance (RDS(on)) c VGS = 10V, ID =1.5A - 5.0 6.5 Ω
Dynamic Characteristics
Input Capacitance (Ciss) VDS = 25V, VGS = 0V, f = 1.0MHz - 2036 - pF
Output Capacitance (Coss) - 98 - pF
Reverse Transfer Capacitance (Crss) - 12.8 - pF
Switching Characteristics
Turn-On Delay Time (td(on)) VDD = 750V, ID =3A, RG = 10Ω - 35.8 - ns
Turn-On Rise Time (tr) - 19.4 - ns
Turn-Off Delay Time (td(off)) - 56 - ns
Turn-Off Fall Time (tf) - 31.2 - ns
Total Gate Charge (Qg) VDD = 750V, ID =3A, VGS = 10V - 37.6 - nC
Gate-Source Charge (Qgs) - 9.9 - nC
Gate-Drain Charge (Qgd) - 14.4 - nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Continuous Current (IS) VGS = 0V - - 3 A
Maximum Pulsed Current (ISM) VGS = 0V - - 12 A
Drain-Source Diode Forward Voltage (VSD) VGS = 0V, IS = 3A - - 1.5 V
Reverse Recovery Time (trr) IS=3A, Tj = 25°C, dIF/dt=100A/us, VGS=0V - 882 - ns
Reverse Recovery Charge (Qrr) - 6.5 - µC

Package Information

Symbol Unit Min Nom Max Symbol Unit Min Nom Max
A mm 5.35 5.55 5.75 E1 mm 9.80 10.0 10.2
A1 mm 2.80 3.00 3.20 E2 mm 3.80 4.00 4.20
A2 mm 1.90 2.10 2.30 H mm 24.3 24.5 24.7
A3 mm 1.00 1.20 1.40 H1 mm 9.80 10.0 10.2
b mm 0.80 0.90 1.00 H2 mm 14.3 14.5 14.7
b1 mm 1.80 2.00 2.20 H3 mm 18.5 19.0 19.5
b2 mm 1.80 2.00 2.20 H4 mm 2.00 2.20 2.40
c mm 0.70 0.90 1.10 H5 mm 24.0 24.5 25.0
e mm 5.25 5.45 5.65 G mm 4.3 4.5 4.7
E mm 15.2 15.4 15.6 ΦP mm 3.30 3.50 3.70

2410122012_MIRACLE-POWER-MPW03NA5_C17702002.pdf

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