Power MOSFET MIRACLE POWER MPW03NA5 with 1500V Drain Source Voltage and High Avalanche Energy Rating
Product Overview
The MPW03NA5 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This MOSFET features a high breakdown voltage of 1500V and a continuous drain current of 3A, with a low ON resistance of 5 (Typ.) at VGS = 10V. It is designed for fast switching, low gate charge, and offers 100% single pulse avalanche energy testing. Ideal for power switch circuits in adaptors and chargers.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPW03NA5
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 1500 | V | |||
| Gate-Source Voltage (VGS) | ±30 | V | |||
| Drain Current-Continuous (ID) @ TC=25°C | 3 | A | |||
| Drain Current-Continuous (ID) @ TC=100°C | 1.8 | A | |||
| Drain Current-Pulsed (IDM) | b | 12 | A | ||
| Maximum Power Dissipation (PD) @ TJ=25°C | 32 | W | |||
| Single Pulsed Avalanche Energy (EAS) | d | 245 | mJ | ||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | °C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-Case (RθJC) | Max. | 3.8 | °C/W | ||
| Thermal Resistance Junction-Ambient (RθJA) | Max. | 40 | °C/W | ||
| Electrical Characteristics (TJ = 25°C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250μA | 1500 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 1500V, VGS = 0V | - | - | 1 | μA |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = ±30V | - | - | ±100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID =250μA | 3 | - | 5 | V |
| Static Drain-Source On-Resistance (RDS(on)) | c VGS = 10V, ID =1.5A | - | 5.0 | 6.5 | Ω |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2036 | - | pF |
| Output Capacitance (Coss) | - | 98 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 12.8 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 750V, ID =3A, RG = 10Ω | - | 35.8 | - | ns |
| Turn-On Rise Time (tr) | - | 19.4 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 56 | - | ns | |
| Turn-Off Fall Time (tf) | - | 31.2 | - | ns | |
| Total Gate Charge (Qg) | VDD = 750V, ID =3A, VGS = 10V | - | 37.6 | - | nC |
| Gate-Source Charge (Qgs) | - | 9.9 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 14.4 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VGS = 0V | - | - | 3 | A |
| Maximum Pulsed Current (ISM) | VGS = 0V | - | - | 12 | A |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 3A | - | - | 1.5 | V |
| Reverse Recovery Time (trr) | IS=3A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | - | 882 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 6.5 | - | µC | |
Package Information
| Symbol | Unit | Min | Nom | Max | Symbol | Unit | Min | Nom | Max |
|---|---|---|---|---|---|---|---|---|---|
| A | mm | 5.35 | 5.55 | 5.75 | E1 | mm | 9.80 | 10.0 | 10.2 |
| A1 | mm | 2.80 | 3.00 | 3.20 | E2 | mm | 3.80 | 4.00 | 4.20 |
| A2 | mm | 1.90 | 2.10 | 2.30 | H | mm | 24.3 | 24.5 | 24.7 |
| A3 | mm | 1.00 | 1.20 | 1.40 | H1 | mm | 9.80 | 10.0 | 10.2 |
| b | mm | 0.80 | 0.90 | 1.00 | H2 | mm | 14.3 | 14.5 | 14.7 |
| b1 | mm | 1.80 | 2.00 | 2.20 | H3 | mm | 18.5 | 19.0 | 19.5 |
| b2 | mm | 1.80 | 2.00 | 2.20 | H4 | mm | 2.00 | 2.20 | 2.40 |
| c | mm | 0.70 | 0.90 | 1.10 | H5 | mm | 24.0 | 24.5 | 25.0 |
| e | mm | 5.25 | 5.45 | 5.65 | G | mm | 4.3 | 4.5 | 4.7 |
| E | mm | 15.2 | 15.4 | 15.6 | ΦP | mm | 3.30 | 3.50 | 3.70 |
2410122012_MIRACLE-POWER-MPW03NA5_C17702002.pdf
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