Low Forward Voltage Drop NH ES1G Super Fast Recovery Rectifier for LED Driver and Inverter Circuits
Key Attributes
Model Number:
ES1G
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
35ns
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
400V
Voltage - Forward(Vf@If):
1.25V@1A
Current - Rectified:
1A
Mfr. Part #:
ES1G
Package:
SOD-123FL
Product Description
Product Overview
The ES1A thru ES1M series are surface mount Super Fast Recovery Rectifiers from Niu Hang Specification Electronic Co. Ltd. These rectifiers feature glass passivated chip junctions, super fast reverse recovery times, low forward voltage drop for high efficiency, and low leakage current for high reliability. They offer high forward surge capability and are suitable for use in high-frequency inverters, AC/DC converters, DC/DC converters, and LED driver applications.
Product Attributes
- Brand: Niu Hang (niuhang trademark)
- Certifications: Lead Free Finish, RoHS Compliant
- Material: Glass passivated chip junction
- Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
- Mounting Position: Any
- Weight: App. 0.0161 grams (0.0006 ounce)
Technical Specifications
| Parameter | Symbol | ES1A | ES1B | ES1D | ES1G | ES1J | ES1K | ES1M | Unit | Test Conditions |
| Maximum DC blocking voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V | TA=25 |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V | TA=25 |
| Maximum average forward rectified current | IF(AV) | 1.0 | A | TA=125 | ||||||
| Peak forward surge current 8.3ms single half sine-wave | IFSM | 35 | A | TA=25 | ||||||
| Maximum instantaneous forward voltage | VF | 1.66 | 1.66 | 1.66 | 1.66 | 1.66 | 1.66 | 1.66 | V | IF= 1.0 A, TA=25 |
| Maximum instantaneous reverse current | IR | 30 | 30 | 30 | 30 | 30 | 30 | 30 | uA | VR=VRRM, TA=25 |
| Typical junction capacitance | CJ | 3.74 | 3.74 | 3.74 | 3.74 | 3.74 | 3.74 | 3.74 | pF | VR=4V, 1MHz |
| Maximum Reverse Recovery Time | TRR | 10 | 10 | 10 | 10 | 10 | 10 | 10 | ns | IF=0.5A, IR=1.0A, IRR=0.25A |
| Current Squared Time Per Diode(t<8.3ms) | I2t | 1.25 | 1.68 | 1.95 | 3.50 | 3.50 | 3.50 | 3.50 | Asec | IF= 1.0 A |
| Typical thermal resistance (Junction to Ambient) | RJA | 85 | /W | Note 2 | ||||||
| Typical thermal resistance (Junction to Case) | RJC | 35 | /W | TA=25 | ||||||
| Operating junction temperature range | TJ | -55 to 150 | ||||||||
| Storage temperature range | TSTG | -55 to 150 | ||||||||
2410121747_NH-ES1G_C7427713.pdf
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