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quality AEC Q101 Qualified Nexperia BC847BPN-QX Transistor Pair in SOT363 Package for Automotive Electronics factory
quality AEC Q101 Qualified Nexperia BC847BPN-QX Transistor Pair in SOT363 Package for Automotive Electronics factory

AEC Q101 Qualified Nexperia BC847BPN-QX Transistor Pair in SOT363 Package for Automotive Electronics

Key Attributes
Model Number: BC847BPN-QX
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
400mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC847BPN-QX
Package:
SOT-323-6
Product Description

Product Overview

The Nexperia BC847BPN-Q is an NPN/PNP general-purpose transistor pair housed in a very small SOT363 (SC-88) SMD plastic package. Designed for general-purpose switching and amplification, this transistor pair offers low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. Its compact design reduces component count and board space, with no mutual interference between the transistors. Qualified according to AEC-Q101, it is recommended for automotive applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Qualification: AEC-Q101
  • Recommended for: Automotive applications

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 45 V
IC Collector current - - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 C 200 - 450 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
ICM Peak collector current - - - 200 mA
IBM Peak base current Single pulse; tp 1 ms - - 200 mA
Ptot Total power dissipation Tamb 25 C (Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint) - - 220 mW
Ptot Total power dissipation Tamb 25 C (Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm) - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air Per transistor; Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint - - 568 K/W
Rth(j-sp) Thermal resistance from junction to solder point Per transistor - - 230 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 45 - - V
V(BR)EBO Emitter-base breakdown voltage IC = 0 A; IE = 100 A; Tamb = 25 C 5 - - V
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 15 nA
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 300 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - 580 700 mV
VBE Base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 C 600 655 750 mV
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 1.5 - pF
Ce Emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - 2.2 - pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz

2410010132_Nexperia-BC847BPN-QX_C5205162.pdf

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