Nexperia PBSS4320T215 SOT23 package NPN transistor featuring low VCEsat and high collector current gain
Product Overview
The PBSS4320T is a 20 V NPN low VCEsat transistor designed for power management applications. It offers a low collector-emitter saturation voltage (VCEsat) and corresponding low RCEsat, high collector current capability, and high collector current gain. These features contribute to improved efficiency by reducing heat generation. Typical applications include low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).
Product Attributes
- Brand: Nexperia (formerly NXP Semiconductors)
- Product Type: NPN low VCEsat transistor
- Package Type: SOT23 plastic package
- Complementary PNP: PBSS5320T
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | 20 | V | |||
| IC | Collector current (DC) | 2 | A | |||
| ICRP | Repetitive peak collector current | Note 1 | 3 | A | ||
| RCEsat | Equivalent on-resistance | IC = 2 A; IB = 200 mA; note 1 | 80 | 105 | m | |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA | 70 | mV | ||
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 50 mA | 120 | mV | ||
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 40 mA; note 1 | 230 | mV | ||
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 200 mA; note 1 | 210 | mV | ||
| VCEsat | Collector-emitter saturation voltage | IC = 3 A; IB = 300 mA; note 1 | 310 | mV | ||
| hFE | DC current gain | IC = 100 mA; VCE = 2 V | 220 | |||
| hFE | DC current gain | IC = 500 mA; VCE = 2 V | 220 | |||
| hFE | DC current gain | IC = 1 A; VCE = 2 V; note 1 | 220 | |||
| hFE | DC current gain | IC = 2 A; VCE = 2 V; note 1 | 200 | |||
| hFE | DC current gain | IC = 3 A; VCE = 2 V; note 1 | 150 | |||
| VCBO | Collector-base voltage | open emitter | 20 | V | ||
| VEBO | Emitter-base voltage | open collector | 5 | V | ||
| ICBO | Collector-base cut-off current | IE = 0 A; VCB = 20 V | 100 | nA | ||
| IEBO | Emitter-base cut-off current | IC = 0 A; VEB = 5 V | 100 | nA | ||
| fT | Transition frequency | IC = 100 mA; VCE = 5 V; f = 100 MHz | 100 | MHz | ||
| Cc | Collector capacitance | IE = Ie = 0 A; VCB = 10 V; f = 1 MHz | 35 | pF | ||
| Ptot | Total power dissipation | Tamb 25 C; note 2 | 300 | mW | ||
| Ptot | Total power dissipation | Tamb 25 C; note 3 | 480 | mW | ||
| Ptot | Total power dissipation | Tamb 25 C; note 4 | 540 | mW | ||
| Ptot | Total power dissipation | Tamb 25 C; notes 1 and 2 | 1.2 | W | ||
| Tstg | Storage temperature | -65 | +150 | C | ||
| Tj | Junction temperature | 150 | C | |||
| Tamb | Operating ambient temperature | -65 | +150 | C |
Note 1: Operated under pulsed conditions: pulse width tp 100 ms; duty cycle 0.25.
Note 2: Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Note 3: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
Note 4: Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm.
2410311234_Nexperia-PBSS4320T-215_C426842.pdf
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