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quality Power MOSFET MIRACLE POWER MS0004B Featuring Low RDS ON and 100 Percent Avalanche Tested Reliability factory
quality Power MOSFET MIRACLE POWER MS0004B Featuring Low RDS ON and 100 Percent Avalanche Tested Reliability factory

Power MOSFET MIRACLE POWER MS0004B Featuring Low RDS ON and 100 Percent Avalanche Tested Reliability

Key Attributes
Model Number: MS0004B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13.6pF
Output Capacitance(Coss):
660pF
Pd - Power Dissipation:
312W
Input Capacitance(Ciss):
4.025nF
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
MS0004B
Package:
TO-263
Product Description

Product Overview

The MS0004B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features 100V drain-source voltage and 120A continuous drain current, with a low RDS(ON) of 3.4m (Typ.) at VGS = 10V. This MOSFET offers ultra-low RDS(ON) and low gate charge, making it suitable for motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC sub-systems, and power management in telecom and industrial automation. It is halogen-free, RoHS-compliant, and 100% avalanche tested.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen-free, RoHS-compliant
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous, TC =25C 120 A
IDM Drain Current-Pulsed 480 A
PD Maximum Power Dissipation @ TJ =25C 312 W
EAS Single Pulsed Avalanche Energy 576 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.4 C/W
RJA Thermal Resistance, Junction to Ambient 45 C/W
Electrical Characteristics
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 100 - - V
IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2 3 4 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 50A - 3.4 4.2 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 2.5 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 1MHz - 4025 - pF
Coss Output Capacitance - 660 - pF
Crss Reverse Transfer Capacitance - 13.6 - pF
On Characteristics (Switching)
td(on) Turn-On Delay Time VDS = 50V, VGS = 10V, RL = 2.5, RGEN = 3 - 17 - ns
tr Turn-On Rise Time - 37 - ns
td(off) Turn-Off Delay Time - 68 - ns
tf Turn-Off Fall Time - 61 - ns
Qgs Gate-Source Charge VDS = 50V, VGS = 0 to 10V, ID = 20A - 19 - nC
Qgd Gate-Drain Charge - 19.4 - nC
Qg Total Gate Charge - 50 - nC
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current - - 120 A
ISM Maximum Pulsed Drain-Source Diode Forward Current - - 480 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - 0.80 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 94 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 242 - nC

2504151445_MIRACLE-POWER-MS0004B_C47361201.pdf

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