N Channel Enhancement Mode MOSFET MIRACLE POWER MS4004D with High Drain Current and Low Gate Charge
Key Attributes
Model Number:
MS4004D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
RDS(on):
2.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Input Capacitance(Ciss):
2.8nF
Output Capacitance(Coss):
1.07nF
Pd - Power Dissipation:
72.7W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
MS4004D
Package:
TO-252
Product Description
Product Overview
The MS4004D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced shielded-gate technology, offering excellent RDS(ON) and low gate charge. This MOSFET is guaranteed for 100% EAS and is suitable for applications such as motor controllers, DC-to-DC converters, and battery-driven electronic products, electrical equipment, and machines.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Shielded-Gate Technology
- Mode: N-Channel Enhancement Mode
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 120 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 77 | A | ||
| IDM | Drain Current-Pulsed | 480 | A | |||
| PD | Maximum Power Dissipation | @ TJ = 25C | 72.7 | W | ||
| EAS | Single Pulsed Avalanche Energy | 306 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.72 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 45 | C/W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 40 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 40V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.1 | 1.5 | 2.2 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 2.3 | 2.9 | m |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 4.5V, ID = 20A | - | 3.0 | 3.8 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 20V, VGS = 0V, f = 1MHz | - | 2800 | - | pF |
| Coss | Output Capacitance | - | 1070 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 110 | - | pF | |
| On Characteristics (Switching) | ||||||
| td(on) | Turn-On Delay Time | VDS = 20V, VGS = 10V, ID = 20A, RG = 3 | - | 4 | - | ns |
| tr | Turn-On Rise Time | - | 5 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 35 | - | ns | |
| tf | Turn-Off Fall Time | - | 11 | - | ns | |
| Qg | Total Gate Charge | VDS = 20V, VGS = 10V, ID = 20A | - | 46 | - | nC |
| Qgs | Gate-Source Charge | - | 8.7 | - | nC | |
| Qgd | Gate-Drain Charge | - | 5.4 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG=VD=0V, Force Current | 120 | A | ||
| ISM | Maximum Pulsed Current | 480 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 50A | - | 0.83 | - | V |
| Trr | Body Diode Reverse Recovery Time | IS = 20A, diS/dt = 100A/s | - | 43 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IS = 20A, diS/dt = 100A/s | - | 53 | - | nC |
2504151445_MIRACLE-POWER-MS4004D_C47361189.pdf
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