High Current Capability PNP Medium Power Transistors Nexperia BCX51 115 Ideal for High Side Switches
Key Attributes
Model Number:
BCX51,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.35W
Transition Frequency(fT):
145MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCX51,115
Package:
SOT-89
Product Description
Product Overview
The Nexperia BCP51, BCX51, and BC51PA series are PNP medium power transistors designed for Surface-Mounted Device (SMD) plastic packages. These transistors offer high current capability, multiple current gain selections, and high power dissipation. They are suitable for applications such as linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers. Select models feature exposed heatsinks for enhanced thermal and electrical conductivity, and leadless packages for miniaturization.
Product Attributes
- Brand: Nexperia
- Product Type: PNP Medium Power Transistors
- Qualification: AEC-Q101 qualified
Technical Specifications
| Model | Package | NPN Complement | VCEO (Max) | IC (Max) | ICM (Max) |
|---|---|---|---|---|---|
| BCP51 | SOT223 (SC-73) | - | -45 V | -1 A | -2 A |
| BCX51 | SOT89 (SC-62, TO-243) | BCX54 | -45 V | -1 A | -2 A |
| BC51PA | SOT1061 (HUSON3) | BC54PA | -45 V | -1 A | -2 A |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | -45 | V |
| IC | Collector current | - | - | - | -1 | A |
| ICM | Peak collector current | single pulse; tp ≤ 1 ms | - | - | -2 | A |
| hFE | DC current gain | VCE = -2 V; IC = -150 mA | 63 | - | 250 | - |
| hFE | DC current gain | VCE = -2 V; IC = -150 mA | 63 | - | 160 | - |
| hFE | DC current gain | VCE = -2 V; IC = -150 mA | 100 | - | 250 | - |
| VCBO | Collector-base voltage | open emitter | - | - | -45 | V |
| VCEO | Collector-emitter voltage | open base | - | - | -45 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -5 | V |
| IC | Collector current | - | - | - | -1 | A |
| ICM | Peak collector current | single pulse; tp ≤ 1 ms | - | - | -2 | A |
| IB | Base current | - | - | - | -0.3 | A |
| IBM | Peak base current | single pulse; tp ≤ 1 ms | - | - | -0.3 | A |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 0.65 | W (BCP51, [1]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 1.00 | W (BCP51, [2]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 1.35 | W (BCP51, [3]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 0.50 | W (BCX51, [1]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 0.95 | W (BCX51, [2]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 1.35 | W (BCX51, [3]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 0.42 | W (BC51PA, [1]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 0.83 | W (BC51PA, [2]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 1.10 | W (BC51PA, [3]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 0.81 | W (BC51PA, [4]) |
| Ptot | Total power dissipation | Tamb ≤ 25 °C | - | - | 1.65 | W (BC51PA, [5]) |
| Tj | Junction temperature | - | - | - | 150 | °C |
| Tamb | Ambient temperature | - | -55 | - | +150 | °C |
| Tstg | Storage temperature | - | -65 | - | +150 | °C |
| Rth(j-a) | Thermal resistance junction to ambient | BCP51 [1] | - | - | 192 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BCP51 [2] | - | - | 125 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BCP51 [3] | - | - | 93 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BCX51 [1] | - | - | 250 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BCX51 [2] | - | - | 132 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BCX51 [3] | - | - | 93 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BC51PA [1] | - | - | 298 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BC51PA [2] | - | - | 151 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BC51PA [3] | - | - | 114 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BC51PA [4] | - | - | 154 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BC51PA [5] | - | - | 76 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | BCP51 | - | - | 16 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | BCX51 | - | - | 16 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | BC51PA | - | - | 20 | K/W |
| ICBO | Collector-base cut-off current | VCB = -30 V; IE = 0 A | - | - | -100 | nA |
| ICBO | Collector-base cut-off current | VCB = -30 V; IE = 0 A; Tj = 150 °C | - | - | -10 | µA |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -100 | nA |
| hFE | DC current gain | VCE = -2 V; IC = -5 mA | 63 | - | - | - |
| hFE | DC current gain | VCE = -2 V; IC = -150 mA | 63 | - | 250 | - |
| hFE | DC current gain | VCE = -2 V; IC = -500 mA [1] | 40 | - | - | - |
| hFE | DC current gain | VCE = -2 V; hFE selection -10; IC = -150 mA | 63 | - | 160 | - |
| hFE | DC current gain | VCE = -2 V; hFE selection -16; IC = -150 mA | 100 | - | 250 | - |
| VCEsat | Collector-emitter saturation voltage | IC = -500 mA; IB = -50 mA [1] | - | - | -0.5 | V |
| VBE | Base-emitter voltage | VCE = -2 V; IC = -500 mA [1] | - | - | -1 | V |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | 15 | - | pF |
| fT | Transition frequency | VCE = -5 V; IC = -50 mA; f = 100 MHz | - | 145 | - | MHz |
2410121732_Nexperia-BCX51-115_C130421.pdf
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