High Frequency Switching MOSFET MIRACLE POWER MS3005X with Low On Resistance and Robust Construction

Key Attributes
Model Number: MS3005X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
RDS(on):
4.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Output Capacitance(Coss):
434pF
Pd - Power Dissipation:
23W
Input Capacitance(Ciss):
867pF
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
MS3005X
Package:
PDFN-8(3.3x3.3)
Product Description

Product Overview

The MS3005X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with advanced technology for high-performance applications. It offers a robust combination of 30V drain-source voltage and 30A continuous drain current, with a low on-resistance of 3.9m at VGS = 10V. Key features include reliable and rugged construction, fast switching speeds, and guaranteed 100% EAS (Avalanche Energy). This MOSFET is ideal for high-frequency switching, synchronous rectification, and DC/DC converter applications.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Miracle Technology
  • Green Device Available

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage 30 V
Current 30 A
RDS(ON) VGS = 10V 3.9 m
Avalanche Energy Single pulse 64 mJ
Avalanche Current 24 A
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted 30 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous Tc = 25C 30 A
ID Drain Current-Continuous Tc = 100C 30 A
IDM Drain Current-Pulsed a 200 A
EAS Avalanche Energy, Single pulse b 64 mJ
IAS Avalanche Current 24 A
PD Maximum Power Dissipation @ Tc = 25C 23 W
TSTG Store Temperature Range -55 150 C
TJ Operating Junction Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance Junction-Case Max 5.4 C/W
RJA Thermal Resistance Junction-Ambient Maxc 75 C/W
Electrical Characteristics
TJ = 25C unless otherwise noted
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 1.5 2.0 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 20A - 3.9 4.8 m
RDS(on) Static Drain-Source On- Resistance VGS = 4.5V, ID = 20A - 5.2 6.4 m
gfs Forward Transconductance VDS= 5V, ID= 20A - 63 - S
Dynamic Characteristics
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz - 867 - pF
Coss Output Capacitance - 434 - pF
Crss Reverse Transfer Capacitance - 55 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDS = 15V, RL= 0.75, RG = 3,VGS=10V - 8.9 - ns
tr Turn-On Rise Time - 73.9 - ns
td(off) Turn-Off Delay Time - 17.7 - ns
tf Turn-Off Fall Time - 81 - ns
Qg Total Gate Charge VDS = 15V, ID = 20A, VGS = 10V - 17 - nC
Qgs Gate-Source Charge - 3.8 - nC
Qgd Gate-Drain Charge - 3.2 - nC
Drain-Source Diode Characteristics
IS Continuous Source Current VG=VD=0V, Force Current - - 30 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, ISD = 1A - - 1 V
trr Reverse Recovery Time IF= 20A, di/dt=100A/us, TJ=25C - 14 - ns
Qrr Reverse Recovery Charge - 3 - nC

2504151445_MIRACLE-POWER-MS3005X_C47361175.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.