Nexperia BC807-40W 115 PNP Transistor SOT323 Package for General Purpose Amplification and Switching
Key Attributes
Model Number:
BC807-40W,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
80MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC807-40W,115
Package:
SOT-323
Product Description
Nexperia BC807W Series PNP General-Purpose Transistors
Product Overview
The Nexperia BC807W series comprises PNP general-purpose transistors in a compact SOT323 (SC-70) surface-mounted device (SMD) plastic package. These transistors offer high current capabilities and come with three distinct current gain selections, making them suitable for general-purpose switching and amplification applications.
Product Attributes
- Brand: Nexperia
- Package Type: SOT323 (SC-70)
- Transistor Type: PNP
- Qualification: Non-automotive
Technical Specifications
| Model | NPN Complement | VCEO (Max) | IC (Max) | Marking Code |
|---|---|---|---|---|
| BC807W | BC817W | -45 V | -500 mA | 5D% |
| BC807-16W | BC817-16W | -45 V | -500 mA | 5A% |
| BC807-25W | BC817-25W | -45 V | -500 mA | 5B% |
| BC807-40W | BC817-40W | -45 V | -500 mA | 5C% |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base; Tamb = 25 C | - | - | -45 | V |
| IC | Collector current | Tamb = 25 C | - | - | -500 | mA |
| ICM | Peak collector current | single pulse; tp 1 ms; Tamb = 25 C | - | - | -1 | A |
| hFE | DC current gain (BC807W) | VCE = -1 V; IC = -100 mA; Tamb = 25 C (pulsed) | 100 | - | 600 | - |
| hFE | DC current gain (BC807-16W) | VCE = -1 V; IC = -100 mA; Tamb = 25 C (pulsed) | 100 | - | 250 | - |
| hFE | DC current gain (BC807-25W) | VCE = -1 V; IC = -100 mA; Tamb = 25 C (pulsed) | 160 | - | 400 | - |
| hFE | DC current gain (BC807-40W) | VCE = -1 V; IC = -100 mA; Tamb = 25 C (pulsed) | 250 | - | 600 | - |
| VCBO | Collector-base voltage | open emitter; Tamb = 25 C | - | - | -50 | V |
| VEBO | Emitter-base voltage | open collector; Tamb = 25 C | - | - | -5 | V |
| IBM | Peak base current | single pulse; tp 1 ms; Tamb = 25 C | - | - | -200 | mA |
| Ptot | Total power dissipation | Tamb 25 C (on FR4 PCB, 1 cm2 mounting pad) | - | - | 290 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| V(BR)CBO | Collector-base breakdown voltage | IC = -100 A; IE = 0 A; Tamb = 25 C | -50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -10 mA; IE = 0 A; Tamb = 25 C | -45 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | IE = -100 A; IC = 0 A; Tamb = 25 C | -5 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = -20 V; IE = 0 A; Tamb = 25 C | - | - | -100 | nA |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A; Tamb = 25 C | - | - | -100 | nA |
| hFE | DC current gain | VCE = -1 V; IC = -500 mA; Tamb = 25 C (pulsed) | 40 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -500 mA; IB = -50 mA; Tamb = 25 C (pulsed) | - | - | -700 | mV |
| VBE | Base-emitter voltage | VCE = -1 V; IC = -500 mA; Tamb = 25 C (pulsed) | - | - | -1.2 | V |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C | 80 | - | - | MHz |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 5 | pF |
2410010201_Nexperia-BC807-40W-115_C75563.pdf
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