Nexperia BC847A215 NPN Transistor Offering Versatile Performance for Electronic Circuit Applications
Product Overview
The Nexperia BC847x series comprises NPN general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in compact SOT23 (TO-236AB) surface-mounted plastic packages, offering three distinct gain selections to cater to various design needs. With a collector-emitter voltage of 45 V and a collector current of 100 mA, they provide reliable performance for general-purpose electronic circuits.
Product Attributes
- Brand: Nexperia
- Package Type: SOT23 (TO-236AB)
- Technology: NPN General-Purpose Transistor
- Complementary PNP Type: BC857 series
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| General Characteristics | |||||||
| VCEO | Collector-emitter voltage (open base) | - | - | 45 | V | ||
| IC | Collector current | - | - | 100 | mA | ||
| VCBO | Collector-base voltage (open emitter) | - | - | 50 | V | ||
| VEBO | Emitter-base voltage (open collector) | - | - | 6 | V | ||
| ICM | Peak collector current (single pulse, tp 1 ms) | - | - | 200 | mA | ||
| IBM | Peak base current (single pulse, tp 1 ms) | - | - | 100 | mA | ||
| Ptot | Total power dissipation (Tamb 25 C) | Device mounted on an FR4 PCB | - | - | 250 | mW | |
| Tj | Junction temperature | - | - | 150 | C | ||
| Tamb | Ambient temperature | -65 | - | 150 | C | ||
| Tstg | Storage temperature | -65 | - | 150 | C | ||
| Thermal Characteristics | |||||||
| Rth(j-a) | Thermal resistance from junction to ambient (free air) | Device mounted on an FR4 PCB | - | - | 500 | K/W | |
| Characteristics (Tamb = 25 C unless otherwise specified) | |||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A | 50 | - | - | V | |
| V(BR)CES | Collector-emitter breakdown voltage | IC = 2 mA; VBE = 0 A | 45 | - | - | V | |
| V(BR)EBO | Emitter-base breakdown voltage | IC = 0 A; IE = 100 A | 6 | - | - | V | |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A | - | - | 15 | nA | |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tj = 150 C | - | - | 5 | A | |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 100 | nA | |
| hFE | DC current gain | BC847A | - | 170 | - | ||
| BC847B | - | 280 | - | ||||
| BC847C (VCE = 5 V; IC = 10 A) | - | 420 | - | ||||
| BC847 (VCE = 5 V; IC = 2 mA) | 110 | - | 800 | ||||
| hFE | DC current gain | BC847A (VCE = 5 V; IC = 2 mA) | 110 | 180 | 220 | ||
| BC847B (VCE = 5 V; IC = 2 mA) | 200 | 290 | 450 | ||||
| BC847C (VCE = 5 V; IC = 2 mA) | 420 | 520 | 800 | ||||
| (IC = 10 mA; IB = 0.5 mA) | - | 90 | 200 | ||||
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 5 mA (pulsed; tp 300 s; 0.02) | - | 200 | 400 | mV | |
| IC = 10 mA; IB = 0.5 mA | - | 700 | - | mV | |||
| VBEsat | Base-emitter saturation voltage | IC = 100 mA; IB = 5 mA | - | 900 | - | mV | |
| IC = 10 mA; IB = 0.5 mA | - | 700 | - | mV | |||
| VBE | Base-emitter voltage | VCE = 5 V; IC = 2 mA | 580 | 660 | 700 | mV | |
| VCE = 5 V; IC = 10 mA | - | 770 | - | mV | |||
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | 100 | - | - | MHz | |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 1.5 | pF | |
| Ce | Emitter capacitance | VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz | - | 11 | - | pF | |
| NF | Noise figure | IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200Hz | - | 2 | 10 | dB | |
| Package Outline | |||||||
| Package | SOT23 (TO-236AB) | Dimensions | See Figure 14 | ||||
| Soldering Footprint | |||||||
| Reflow Soldering | SOT23 (TO-236AB) | Dimensions | See Figure 15 | ||||
| Wave Soldering | SOT23 (TO-236AB) | Dimensions | See Figure 16 | ||||
2410010302_Nexperia-BC847A-215_C131674.pdf
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