Nexperia BC847A215 NPN Transistor Offering Versatile Performance for Electronic Circuit Applications

Key Attributes
Model Number: BC847A,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC847A,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia BC847x series comprises NPN general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in compact SOT23 (TO-236AB) surface-mounted plastic packages, offering three distinct gain selections to cater to various design needs. With a collector-emitter voltage of 45 V and a collector current of 100 mA, they provide reliable performance for general-purpose electronic circuits.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Technology: NPN General-Purpose Transistor
  • Complementary PNP Type: BC857 series

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
General Characteristics
VCEO Collector-emitter voltage (open base) - - 45 V
IC Collector current - - 100 mA
VCBO Collector-base voltage (open emitter) - - 50 V
VEBO Emitter-base voltage (open collector) - - 6 V
ICM Peak collector current (single pulse, tp 1 ms) - - 200 mA
IBM Peak base current (single pulse, tp 1 ms) - - 100 mA
Ptot Total power dissipation (Tamb 25 C) Device mounted on an FR4 PCB - - 250 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature -65 - 150 C
Tstg Storage temperature -65 - 150 C
Thermal Characteristics
Rth(j-a) Thermal resistance from junction to ambient (free air) Device mounted on an FR4 PCB - - 500 K/W
Characteristics (Tamb = 25 C unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A 50 - - V
V(BR)CES Collector-emitter breakdown voltage IC = 2 mA; VBE = 0 A 45 - - V
V(BR)EBO Emitter-base breakdown voltage IC = 0 A; IE = 100 A 6 - - V
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A - - 15 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain BC847A - 170 -
BC847B - 280 -
BC847C (VCE = 5 V; IC = 10 A) - 420 -
BC847 (VCE = 5 V; IC = 2 mA) 110 - 800
hFE DC current gain BC847A (VCE = 5 V; IC = 2 mA) 110 180 220
BC847B (VCE = 5 V; IC = 2 mA) 200 290 450
BC847C (VCE = 5 V; IC = 2 mA) 420 520 800
(IC = 10 mA; IB = 0.5 mA) - 90 200
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 5 mA (pulsed; tp 300 s; 0.02) - 200 400 mV
IC = 10 mA; IB = 0.5 mA - 700 - mV
VBEsat Base-emitter saturation voltage IC = 100 mA; IB = 5 mA - 900 - mV
IC = 10 mA; IB = 0.5 mA - 700 - mV
VBE Base-emitter voltage VCE = 5 V; IC = 2 mA 580 660 700 mV
VCE = 5 V; IC = 10 mA - 770 - mV
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 - - MHz
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 1.5 pF
Ce Emitter capacitance VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz - 11 - pF
NF Noise figure IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200Hz - 2 10 dB
Package Outline
Package SOT23 (TO-236AB) Dimensions See Figure 14
Soldering Footprint
Reflow Soldering SOT23 (TO-236AB) Dimensions See Figure 15
Wave Soldering SOT23 (TO-236AB) Dimensions See Figure 16

2410010302_Nexperia-BC847A-215_C131674.pdf

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