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quality power MOSFET MIRACLE POWER MJD06N65 designed for LED lighting and LCD PDP TV power management systems factory
quality power MOSFET MIRACLE POWER MJD06N65 designed for LED lighting and LCD PDP TV power management systems factory

power MOSFET MIRACLE POWER MJD06N65 designed for LED lighting and LCD PDP TV power management systems

Key Attributes
Model Number: MJD06N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
9A
RDS(on):
850mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.55pF
Output Capacitance(Coss):
33pF
Input Capacitance(Ciss):
377pF
Pd - Power Dissipation:
70W
Mfr. Part #:
MJD06N65
Package:
TO-252
Product Description

Product Overview

The MJD06N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy gate switching control. It is 100% avalanche tested and suitable for applications such as PD Adapters, LCD & PDP TVs, LED lighting, and Boost PFC switches, including single-ended flyback or two-transistor forward topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Super Junction Technology
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted - - 650 V
VGS Gate-Source Voltage - - 30 - V
ID Drain Current-Continuous TC =25C - - 6 A
IDM Drain Current-Pulsed - - - 18 A
PD Maximum Power Dissipation @ TJ =25C - - 70 W
dv/dt Peak Diode Recovery dv/dt - - - 15 V/ns
EAS Single Pulsed Avalanche Energy - - - 80 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 1.78 - C/W
RJA Thermal Resistance, Junction to Ambient - - 62 - C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 10mA 650 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.8 - 4.2 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 2.5A - 0.75 0.85
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 33.7 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 10kHz - 377 - pF
Coss Output Capacitance - - 33 - pF
Crss Reverse Transfer Capacitance - - 4.55 - pF
On Characteristics (Switching)
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 2.5A, RG = 6.8 - 8.4 - ns
tr Turn-On Rise Time - - 21.6 - ns
td(off) Turn-Off Delay Time - - 45.2 - ns
tf Turn-Off Fall Time - - 24.4 - ns
Qg Total Gate Charge VDD = 400V, VGS = 0 to 10V, ID = 2.5A - 10.3 - nC
Qgs Gate-Source Charge - - 1.84 - -
Qgd Gate-Drain Charge - - 2.73 - -
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 6 A
ISM Maximum Pulsed Current VGS = 0V - - 18 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.78 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 2.5A, dIF/dt = 100A/s - 124 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 2.5A, dIF/dt = 100A/s - 0.88 - C

2504151445_MIRACLE-POWER-MJD06N65_C47361153.pdf

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