General purpose MSKSEMI BT131W-800T-MS triac with high blocking voltage and four quadrant triggering
Key Attributes
Model Number:
BT131W-800T-MS
Product Custom Attributes
Mfr. Part #:
BT131W-800T-MS
Package:
SOT-223
Product Description
Product Overview
The BT131W-xxxx-MS series are general-purpose triacs designed for direct interfacing with logic-level ICs and low-power gate drive circuits. These devices offer high blocking voltage capability, planar passivation for enhanced voltage ruggedness and reliability, and triggering in all four quadrants. They are ideal for applications such as general purpose motor control, phase control operations in light dimmers, motor speed controllers, and home appliances.
Product Attributes
- Brand: Msksemi
- Package Type: SOT-223
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 600/800 | V | (Tj=25) |
| Repetitive peak reverse voltage | VRRM | 600/800 | V | (Tj=25) |
| RMS on-state current | IT(RMS) | 1 | A | (TC=75) |
| Non repetitive surge peak on-state current | ITSM | 16 | A | (full cycle, F=50Hz) |
| I2t value for fusing | I2t | 1.28 | A2S | (tp=10ms) |
| Critical rate of rise of on-state current | dI/dt | 20 | A/s | (IG=2*IGT) |
| Peak gate current | IGM | 2 | A | |
| Average gate power dissipation | PG(AV) | 0.5 | W | |
| Peak gate power | PGM | 5 | W | |
| Operating junction temperature range | Tj | -40 to +125 | ||
| Storage junction temperature range | TSTG | -40 to +150 | ||
| Gate Trigger Current (Quadrant I, II, III) | IGT | 5 | mA | VD=12V |
| Gate Trigger Current (Quadrant IV) | IGT | 10 | mA | VD=12V |
| Gate Trigger Voltage | VGT | 1.3 | V | ALL Quadrants |
| Gate Non-trigger Voltage | VGD | 0.2 | V | VD=VDRM, RL=3.3K, Tj=125 |
| Holding Current (Quadrant I, III) | IH | 5 | mA | IT=100mA |
| Holding Current (Quadrant II, IV) | IH | 5 | mA | IT=100mA |
| Latching Current (Quadrant I) | IL | 5 | mA | IG=1.2IGT |
| Latching Current (Quadrant II) | IL | 5 | mA | IG=1.2IGT |
| Latching Current (Quadrant III) | IL | 5 | mA | IG=1.2IGT |
| Latching Current (Quadrant IV) | IL | 10 | mA | IG=1.2IGT |
| Critical rate of rise of off-state voltage | dVD/dt | 15 | V/s | VD=67%VDRM, Tj=125 |
| On-state voltage | VTM | 1.5 | V | ITM=1.4A, tp=380s |
| Peak on-state current | ITM | 1.4 | A | (tp=380s) |
| Off-state current | IDRM | 5 | uA | VD=VDRM, VR=VRRM, Tj=25 |
| Off-state current | IRRM | 500 | uA | Tj=125 |
| Junction to case thermal resistance (AC) | Rth(j-c) | 31 | /W | |
| Junction to ambient thermal resistance | Rth(j-a) | 60 | /W |
| Model Number | Package | Quantity |
|---|---|---|
| BT131W-600D-MS | SOT-223 | 1000 |
| BT131W-600T-MS | SOT-223 | 1000 |
| BT131W-800D-MS | SOT-223 | 1000 |
| BT131W-800T-MS | SOT-223 | 1000 |
2509051530_MSKSEMI-BT131W-800T-MS_C50385343.pdf
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