86--136 6733 2386
quality 200V 9A N Channel Power MOSFET with Low Crss and 100 Percent Avalanche Tested MIRACLE POWER MPC09N20A factory
quality 200V 9A N Channel Power MOSFET with Low Crss and 100 Percent Avalanche Tested MIRACLE POWER MPC09N20A factory

200V 9A N Channel Power MOSFET with Low Crss and 100 Percent Avalanche Tested MIRACLE POWER MPC09N20A

Key Attributes
Model Number: MPC09N20A
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
9A
RDS(on):
280mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.9pF
Input Capacitance(Ciss):
575pF
Pd - Power Dissipation:
139W
Output Capacitance(Coss):
54pF
Gate Charge(Qg):
13.9nC@10V
Mfr. Part #:
MPC09N20A
Package:
TO-220
Product Description

Product Overview

The MPC09N20A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency applications. It features a 200V drain-source voltage, a continuous drain current of 9A, and a typical on-resistance of 0.23 at 10V gate-source voltage. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing. This MOSFET is ideal for high-efficiency switch-mode power supplies, electronic lamp ballasts based on half-bridge designs, and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Model: MPC09N20A

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(ON) VGS = 10V 200V, 9A, 0.23
Low Crss
Fast Switching
100% Avalanche Tested
Application
High efficiency switch mode power supplies
Electronic lamp ballasts based on half bridge
UPS
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C unless otherwise noted 200 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 9 A
ID Drain Current-Continuous, TC =100C 6 A
IDM Drain Current-Pulsed b 36 A
PD Maximum Power Dissipation @ TJ =25C 139 W
dv/dt Peak Diode Recovery dv/dt c 5 V/ns
EAS Single Pulsed Avalanche Energy d 157 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.9 C/W
RJA Thermal Resistance, Junction to Ambient 69 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 200 - - V
IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 4.5A 0.23 0.28
Dynamic Characteristics
Ciss Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz 575 - pF
Coss Output Capacitance 54 - pF
Crss Reverse Transfer Capacitance 10.9 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 100V, ID =9A, VGS=10V 8.8 - ns
tr Turn-On Rise Time 24 - ns
td(off) Turn-Off Delay Time 36 - ns
tf Turn-Off Fall Time 26 - ns
Qg Total Gate Charge VDS = 100V, ID =9A, VGS = 10V 13.9 - nC
Qgs Gate-Source Charge 3.7 - nC
Qgd Gate-Drain Charge 4.7 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - 9 A
ISM Maximum Pulsed Current VGS = 0V - 36 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 4.5A - 1.2 V
trr Body Diode Reverse Recovery Time IS=9A,VGS = 0V dIF/dt=100A/us 132 - ns
Qrr Body Diode Reverse Recovery Charge IS=9A,VGS = 0V dIF/dt=100A/us 613 - nC

2504151445_MIRACLE-POWER-MPC09N20A_C47361028.pdf
Related Products
quality DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability factory
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
quality General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic factory
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
quality Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications factory
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.