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quality General purpose PNP transistor Nexperia BC807DS115 with low component count and AECQ101 certification factory
quality General purpose PNP transistor Nexperia BC807DS115 with low component count and AECQ101 certification factory

General purpose PNP transistor Nexperia BC807DS115 with low component count and AECQ101 certification

Key Attributes
Model Number: BC807DS,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
600mW
Transition Frequency(fT):
80MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC807DS,115
Package:
SC-74-6
Product Description

Product Overview

The Nexperia BC807DS is a PNP/PNP general-purpose double transistor designed for switching and amplification applications. This AEC-Q101 qualified component offers reduced component count and lower pick-and-place costs, making it suitable for automotive applications. It is available in an SOT457 (SC-74) plastic package.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP/PNP general purpose double transistors
  • Complementary NPN/NPN: BC817DS
  • Complementary NPN/PNP: BC817DPN
  • Qualification: AEC-Q101 qualified
  • Package Type: SOT457 (SC-74)
  • Material: Plastic, surface-mounted package

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - -45 V
IC Collector current - - - -500 mA
ICM Peak collector current Single pulse; tp 1 ms - - 1 A
VCBO Collector-base voltage Open emitter - - -50 V
VEBO Emitter-base voltage Open collector - - -5 V
IBM Peak base current Single pulse; tp 1 ms - - -200 mA
Ptot Total power dissipation Tamb 25 C [1] - - 370 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 600 mW
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 208 K/W
Characteristics (Tamb = 25 C unless otherwise specified)
ICBO Collector-base cut-off current VCB = -20 V; IE = 0 A - - -100 nA
ICBO Collector-base cut-off current VCB = -20 V; IE = 0 A; Tj = 150 C - - -5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -100 nA
hFE DC current gain VCE = -1 V; IC = -100 mA [1] 160 - 400 -
hFE DC current gain VCE = -1 V; IC = -500 mA [1] 40 - - -
VCEsat Collector-emitter saturation voltage IC = -500 mA; IB = -50 mA [1] - - -700 mV
VBE Base-emitter voltage VCE = -1 V; IC = -500 mA [1] [2] - - -1.2 V
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz - 9 - pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz 80 - - MHz

[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin plated; mounting pad for collector 1 cm.

[2] VBE decreases by approximately -2 mV/k with increasing temperature.


2410122132_Nexperia-BC807DS-115_C191355.pdf

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