Nexperia PEMD20 115 transistor designed to reduce manufacturing costs and improve circuit efficiency
Key Attributes
Model Number:
PEMD20,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PEMD20,115
Package:
SOT-666-6
Product Description
Product Overview
The PEMD20 and PUMD20 are NPN/PNP resistor-equipped transistors (RETs) designed to simplify circuit design and reduce component count. Featuring built-in bias resistors, these devices are ideal for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications. They offer enhanced circuit efficiency and reduced manufacturing costs.
Product Attributes
- Brand: Philips Semiconductors
- Product Type: NPN/PNP Resistor-Equipped Transistors (RETs)
Technical Specifications
| Type Number | Package | PNP/PNP Complement | NPN/NPN Complement | R1 (Bias Resistor 1) | R2/R1 (Bias Resistor Ratio) | VCEO (Collector-Emitter Voltage) | IO (Output Current, DC) |
|---|---|---|---|---|---|---|---|
| PEMD20 | SOT666 | PEMB20 | PEMH20 | 2.2 k | 2.2 k | 50 V | 100 mA |
| PUMD20 | SOT363 (SC-88) | PUMB20 | PUMH20 | 2.2 k | 2.2 k | 50 V | 100 mA |
Pinning Information
| Pin | Description | Symbol |
|---|---|---|
| 1 | GND (emitter) TR1 | TR1 |
| 2 | input (base) TR1 | TR1 |
| 3 | output (collector) TR1 | TR1 |
| 4 | GND (emitter) TR2 | TR2 |
| 5 | input (base) TR2 | TR2 |
| 6 | output (collector) TR2 | TR2 |
Ordering Information
| Type Number | Package Name | Description | Version |
|---|---|---|---|
| PEMD20 | SOT666 | plastic surface mounted package; 6 leads | - |
| PUMD20 | SOT363 | plastic surface mounted package; 6 leads | SC-88 |
Marking Codes
| Type Number | Marking Code [1] |
|---|---|
| PEMD20 | 6H |
| PUMD20 | T6* |
Limiting Values
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Per transistor; for the PNP transistor with negative polarity | |||||
| VCBO | collector-base voltage | open emitter | - | 50 | V |
| VCEO | collector-emitter voltage | open base | - | 50 | V |
| VEBO | emitter-base voltage | open collector | - | 10 | V |
| VI | input voltage TR1 | positive | - | +12 | V |
| VI | input voltage TR1 | negative | - | -10 | V |
| VI | input voltage TR2 | positive | - | +10 | V |
| VI | input voltage TR2 | negative | - | -12 | V |
| IO | output current (DC) | - | - | 100 | mA |
| ICM | peak collector current | - | - | 100 | mA |
| Per device | |||||
| Ptot | total power dissipation | Tamb 25 C SOT363 [1] | - | 200 | mW |
| Ptot | total power dissipation | Tamb 25 C SOT666 [1] [2] | - | 200 | mW |
| Ptot | total power dissipation | Tamb 25 C SOT363 [1] | - | 300 | mW |
| Ptot | total power dissipation | Tamb 25 C SOT666 [1] [2] | - | 300 | mW |
| Tstg | storage temperature | - | -65 | +150 | C |
| Tj | junction temperature | - | - | 150 | C |
| Tamb | ambient temperature | - | -65 | +150 | C |
Thermal Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| Rth(j-a) | thermal resistance from junction to ambient in free air | SOT363 [1] | - | - | 625 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient in free air | SOT666 [1] [2] | - | - | 625 | K/W |
| Per device | ||||||
| Rth(j-a) | thermal resistance from junction to ambient in free air | SOT363 [1] | - | - | 416 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient in free air | SOT666 [1] [2] | - | - | 416 | K/W |
Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor; for the PNP transistor with negative polarity | ||||||
| ICBO | collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO | collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 50 | A |
| IEBO | emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 2 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 20 mA | 30 | - | - | |
| VCEsat | collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| VI(off) | off-state input voltage | VCE = 5 V; IC = 1 mA | - | 1.2 | 0.5 | V |
| VI(on) | on-state input voltage | VCE = 0.3 V; IC = 20 mA | 2 | 1.6 | - | V |
| R1 | bias resistor 1 (input) | - | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | bias resistor ratio | - | 0.8 | 1 | 1.2 | |
| Cc | collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| Cc | collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
Package Outline
See attached figures for package outlines SOT363 (SC-88) and SOT666.
Packing Information
| Type Number | Package | Description | Packing Quantity |
|---|---|---|---|
| PEMD20 | SOT666 | 2 mm pitch, 8 mm tape and reel | 3000 |
| PEMD20 | SOT666 | 4 mm pitch, 8 mm tape and reel | 4000 |
| PUMD20 | SOT363 | 4 mm pitch, 8 mm tape and reel; T1 | 8000 |
| PUMD20 | SOT363 | 4 mm pitch, 8 mm tape and reel; T2 | 10000 |
2410121717_Nexperia-PEMD20-115_C552411.pdf
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