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quality Compact PNP PNP Double Transistor with Built in Bias Resistors Nexperia PUMB11 115 in SOT363 Package factory
quality Compact PNP PNP Double Transistor with Built in Bias Resistors Nexperia PUMB11 115 in SOT363 Package factory

Compact PNP PNP Double Transistor with Built in Bias Resistors Nexperia PUMB11 115 in SOT363 Package

Key Attributes
Model Number: PUMB11,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMB11,115
Package:
SOT-363
Product Description

Product Overview

The Nexperia PUMB11 is a PNP/PNP resistor-equipped double transistor in a SOT363 (SC-88) SMD plastic package. It features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This device is suitable for low current peripheral drivers, control of IC inputs, and replacing general-purpose transistors in digital applications. Its NPN/PNP complement is PUMD3, and its NPN/NPN complement is PUMH11.

Product Attributes

  • Brand: Nexperia
  • Package Type: TSSOP6 (SOT363)
  • Technology: Resistor-Equipped Transistor (RET)
  • Transistor Type: PNP/PNP Double Transistor

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage open base - - -50 V
IO Output current - - -100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2
VCBO Collector-base voltage open emitter - - -50 V
VCEO Collector-emitter voltage open base - - -50 V
VEBO Emitter-base voltage open collector - - -10 V
VI Input voltage positive - - 10 V
VI Input voltage negative - - -40 V
IO Output current - - -100 mA
Tj Junction temperature - - 150 C
Tamb Ambient temperature -65 - 150 C
Tstg Storage temperature -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient in free air [1] - - 625 K/W
V(BR)CBO Collector-base breakdown voltage IC = -100 A; IE = 0 A -50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = -2 mA; IB = 0 A -50 - - V
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A - - -1 A
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A; Tj = 150 C - - -5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -400 A
hFE DC current gain VCE = -5 V; IC = -5 mA -30 - -
VCEsat Collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA - - -100 mV
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A - -1.1 -0.8 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -10 mA - -2.5 -1.8 V
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 3 pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz [2] - 180 - MHz
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 200 mW
Ptot Total power dissipation Tamb = 25 C [1] - - 300 mW
Rth(j-a) Thermal resistance junction to ambient in free air [1] - - 417 K/W

[1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint.

[2] Characteristics of built-in transistor


2410010402_Nexperia-PUMB11-115_C282572.pdf

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