Load Switching N Channel Enhancement Mode MOSFET MIRACLE POWER MU3001T with 30V Drain Source Voltage

Key Attributes
Model Number: MU3001T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.7A
Operating Temperature -:
-
RDS(on):
47mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Input Capacitance(Ciss):
834pF
Pd - Power Dissipation:
1.4W
Output Capacitance(Coss):
64pF
Gate Charge(Qg):
9.5nC@10V
Mfr. Part #:
MU3001T
Package:
SOT-23
Product Description

Product Overview

The MU3001T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device is designed for efficient load switching and Pulse Width Modulation (PWM) applications. It boasts a 30V drain-source voltage, a continuous drain current of 5.7A, and a low typical on-resistance of 19m at VGS = 10V. The MU3001T is compliant with RoHS and Halogen-Free standards, making it a suitable choice for environmentally conscious designs.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: RoHS and Halogen-Free
  • Package Type: SOT-23

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted - - 30 V
VGS Gate-Source Voltage Tc = 25C unless otherwise noted - - 12 V
ID Drain Current-Continuous, TA =25C Tc = 25C unless otherwise noted - - 5.7 A
IDM Drain Current-Pulsed a - - 30 A
PD Maximum Power Dissipation @ TA =25C - - - 1.4 W
TSTG Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJA Thermal Resistance Junction-Ambient Maxc - - 125 C/W
Electrical Characteristics
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 0.4 0.9 1.5 V
RDS(on) Static Drain-Source On- Resistance VGS =2.5V, ID =3A - 24.8 47 m
RDS(on) Static Drain-Source On- Resistance VGS =4.5V, ID =5A - 20.7 31 V
RDS(on) Static Drain-Source On- Resistance VGS =10V, ID =5.7A - 19 26 g
gfs Forward Transconductance VDS=5V, ID=5.7A - 33 - mS
Dynamic Characteristics
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz - 834 - pF
Coss Output Capacitance - - 64 - -
Crss Reverse Transfer Capacitance - - 50 - -
Switching Characteristics
td(on) Turn-On Delay Time VDS=15V, RL=2.6, RG=3, VGS =10V - 6 - ns
td(off) Turn-Off Delay Time - - 21 - -
Qg Total Gate Charge VDS =15V, ID=5.7A, VGS = 10V - 9.5 - nC
Drain-Source Diode Characteristics
VSD Diode Forward Voltage VGS = 0V, ISD = 1A - 0.7 1 V
Is Continuous Source Current - - - 2 A
Package Information
Symbol Dimensions (mm) Min. Max. Symbol Dimensions (mm) Min. Max.
L - 2.2 2.7 C - 1.30 Max
L1 - 0.45 0.65 C1 - 0.90 1.20
A - 1.15 1.50 c - 0.05 0.20
B - 2.70 3.10 K - 0 0.10
E - 1.70 2.10 M - 0.20 Min
E1 - 0.85 1.05 P - 7 -
B - 0.35 0.55 - SOT-23 - -

2410122025_MIRACLE-POWER-MU3001T_C17702015.pdf

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