NPN Resistor Equipped Transistor Nexperia PDTC123YT215 for in Amplification Circuit Driving and Switching

Key Attributes
Model Number: PDTC123YT,215
Product Custom Attributes
Input Resistor:
2.2kΩ
Resistor Ratio:
5.5
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC123YT,215
Package:
SOT-23
Product Description

Nexperia PDTC123Y Series NPN Resistor-Equipped Transistors

Product Overview

The Nexperia PDTC123Y series comprises NPN Resistor-Equipped Transistors (RET) designed for general-purpose switching and amplification, circuit driving, and inverter and interface circuits. These transistors feature built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. They are available in various package types including SOT54A, SOT54, SOT416 (SC-75), SOT346 (SC-59A/TO-236), SOT883 (SC-101), SOT23 (TO-236AB), and SOT323 (SC-70).

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistors (RET)
  • Internal Resistors: R1 = 2.2 k, R2 = 10 k

Technical Specifications

Type Number Package Name Description VCEO (V) IO (mA) R1 (k) R2/R1 Ratio
PDTC123YE SOT416 (SC-75) Plastic surface mounted package; 3 leads 50 100 2.2 4.5
PDTC123YK SOT346 (SC-59A/TO-236) Plastic surface mounted package; 3 leads 50 100 2.2 4.5
PDTC123YM SOT883 (SC-101) Leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm 50 100 2.2 4.5
PDTC123YS SOT54 (SC-43A/TO-92) Plastic single-ended leaded (through hole) package; 3 leads 50 100 2.2 4.5
PDTC123YT SOT23 (TO-236AB) Plastic surface mounted package; 3 leads 50 100 2.2 4.5
PDTC123YU SOT323 (SC-70) Plastic surface mounted package; 3 leads 50 100 2.2 4.5

Key Characteristics (Tamb = 25 C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Unit
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 700 A
hFE DC current gain VCE = 5 V; IC = 5 mA 35 - - -
VCEsat Collector-emitter saturation voltage IC =10 mA; IB = 0.5 mA - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 0.75 0.3 V
VI(on) On-state input voltage VCE = 300 mV; IC = 20 mA 2.5 1.15 - V
R1 Bias resistor 1 (input) - 1.54 2.2 2.86 k
R2/R1 Bias resistor ratio - 3.6 4.5 5.5 -
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2 pF

2410121844_Nexperia-PDTC123YT-215_C454936.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.