High voltage N Channel MOSFET MIRACLE POWER MPF12N65 featuring 650V 12A and fast switching capabilities
Key Attributes
Model Number:
MPF12N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
800mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
9.6pF
Number:
1 N-channel
Output Capacitance(Coss):
162pF
Pd - Power Dissipation:
42W
Input Capacitance(Ciss):
1.78nF
Gate Charge(Qg):
40.2nC@10V
Mfr. Part #:
MPF12N65
Package:
TO-220F
Product Description
Product Overview
The MPF12N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 12A at 25C, and a low on-resistance (RDS(ON)) of 0.80 (Max.) at VGS = 10V. Key characteristics include low Crss, fast switching speeds, and 100% avalanche tested reliability. This MOSFET is suitable for a range of applications including adapters, LCD panel power supplies, E-bike chargers, and switching mode power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | VGS = 10V | 650V, 12A, 0.80 | ||||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Application | ||||||
| Adapter | ||||||
| LCD Panel Power | ||||||
| E-Bike Charger | ||||||
| Switching Mode Power Supply | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 12 | A | |||
| ID | Drain Current-Continuous, TC =100C | 7.5 | A | |||
| IDM | Drain Current-Pulsed | b | 48 | A | ||
| PD | Maximum Power Dissipation @ TJ =25C | 42 | W | |||
| EAS | Single Pulsed Avalanche Energy | d | 500 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | Max. | 2.98 | C/W | ||
| RJA | Thermal Resistance Junction-Ambient | Max | 62.5 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On-Resistance | c VGS = 10V, ID = 6A | - | 0.65 | 0.80 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1780 | - | pF |
| Coss | Output Capacitance | - | 162 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 9.6 | - | pF | |
| On Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325V, ID = 12A, RG = 10, VGS=10V | - | 29 | - | ns |
| tr | Turn-On Rise Time | - | 27 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 65 | - | ns | |
| tf | Turn-Off Fall Time | - | 46 | - | ns | |
| Qg | Total Gate Charge | VDS = 520V, ID = 12A, VGS = 10V | - | 40.2 | - | nC |
| Qgs | Gate-Source Charge | - | 10.3 | - | nC | |
| Qgd | Gate-Drain Charge | - | 14.4 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 12 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 48 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 12A | - | - | 1.5 | V |
| trr | Reverse Recovery Time | IS=12A, Tj = 25 dIF/dt=100A/us, VGS=0V | - | 650 | - | ns |
| Qrr | Reverse Recovery Charge | - | 4.29 | - | nC | |
2410122015_MIRACLE-POWER-MPF12N65_C17701989.pdf
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