NJS60R130F NH N Channel MOSFET Featuring 30A Current and High Speed Switching for Power Supplies
Key Attributes
Model Number:
NJS60R130F
Product Custom Attributes
Drain To Source Voltage:
600V
Configuration:
-
Current - Continuous Drain(Id):
30A
RDS(on):
201mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
13W
Input Capacitance(Ciss):
2.4nF
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
NJS60R130F
Package:
TO-220F
Product Description
Product Overview
The NJS60R130F is an N-Channel Enhancement Super Junction MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and high-speed switching, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is suitable for various applications including AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies.
Product Attributes
- Brand: Niuhang (NH Trademark)
- Product Line Code: FF (According to actual changes)
- Date Code: YWW (According to actual changes)
- Internal Code: LLWWF (According to actual changes)
- Package: TO-220F
- Certifications: RoHS COMPLIANT, Pb-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| VDS Min.@Tj | 600 | V | ||||
| ID Min.@Ta | 30 | A | ||||
| RDS(ON) Type@10V | 100.00 | m | ||||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 30 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 19 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | 120 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 31 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 0.25 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current, Single Pulse (Note 1) | L= 0.5 mH | IAS | 49.0 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 300 V | EAS | 600 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 62.5 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 4.0 | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 600 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.712 | -- | V/ |
| Drain-Source Leakage Current | VDS= 600 V,VGS=0V | I DSS | -- | -- | 1.0 | uA |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 15 A,VDS= 15 V | gfs | -- | 10 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 15 A,VGS= 10 V | R DS(ON) | -- | 100.00 | 150.00 | m |
| Drain-Source On Resistance | ID= 15 A,VGS= 4.5 V | R DS(ON) | -- | 115.00 | 201.00 | m |
| Dynamic Characteristics | ||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 6.60 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 2400.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 90.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 1.0 | -- | pF |
| Switching Parameters (Test Circuit & Waveform See Fig.14) | ||||||
| Turn-On Delay Time | VDS= 300 V | t d(on) | -- | 20.0 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 9.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 85.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 6.5 | -- | ns |
| Gate Charge Parameters (Test Circuit & Waveform See Fig.15) | ||||||
| Total Gate Charge | VDS= 300 V | Q g | -- | 56.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 11.0 | -- | nC |
| Gate-Drain Charge | ID= 15 A | Q gd | -- | 23.0 | -- | nC |
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||
| Max. Diode Forward Current | I S | -- | -- | 30 | A | |
| Max. Pulsed Forward Current | I SM | -- | -- | 105 | A | |
| Diode Forward Voltage | ID= 15 A,VGS=0V | V SD | -- | 0.86 | 1.2 | V |
| Reverse Recovery Time | ID= 15 A,di/dt= 100 A/us | t rr | -- | 330 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 300 V | Q rr | -- | 5480.0 | -- | uC |
| General Information | ||||||
| Model ID | NJS60R130F | |||||
| Weight | App. 2.048 | Gram | (0.07224 Ounce) | |||
| Voltage | 600 | Volts | ||||
| Current | 30 | Ampers | ||||
Outline Dimensions (TO-220F)
| Dim. | Millimeters | Inches | ||||
|---|---|---|---|---|---|---|
| Min. | Typ. | Max. | Min. | Typ. | Max. | |
| A | 9.25 | - | 10.75 | 0.36 | - | 0.42 |
| B | 2.30 | - | 2.90 | 0.09 | - | 0.11 |
| C | 4.20 | - | 5.20 | 0.17 | - | 0.20 |
| D | 0.35 | - | 0.75 | 0.01 | - | 0.03 |
| E | 14.80 | - | 16.80 | 0.58 | - | 0.66 |
| F | 8.25 | - | 9.75 | 0.32 | - | 0.38 |
| G | 12.15 | - | 14.15 | 0.48 | - | 0.56 |
| H | 2.40 | - | 3.00 | 0.09 | - | 0.12 |
| J | 1.10 | - | 1.50 | 0.04 | - | 0.06 |
| K | 0.60 | - | 1.00 | 0.02 | - | 0.04 |
| M | 2.20 | - | 3.00 | 0.09 | - | 0.12 |
| O | 2.70 | - | 3.50 | 0.11 | - | 0.14 |
| P | 2.25 | - | 2.85 | 0.09 | - | 0.11 |
Packing Information
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) |
|---|---|---|---|---|---|
| TO-220F | Tube Packaging | 560x155x55 | 1000 | 570284185 | 5000 |
2411070957_NH-NJS60R130F_C41784096.pdf
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