Nexperia PDTD123ET 215 NPN Resistor Equipped Transistors for Control of IC Inputs and Load Switching
Key Attributes
Model Number:
PDTD123ET,215
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTD123ET,215
Package:
SOT-23
Product Description
Nexperia PDTD123E Series NPN Resistor-Equipped Transistors
Product Overview
The Nexperia PDTD123E series comprises NPN Resistor-Equipped Transistors (RET) designed for 500 mA applications. These transistors feature built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick and place costs. They are ideal for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC817 series in digital applications, controlling IC inputs, and switching loads. The series offers a 10 % resistor ratio tolerance.
Product Attributes
- Brand: Nexperia
- Type: NPN Resistor-Equipped Transistors (RET)
- Resistor Values: R1 = 2.2 k, R2 = 2.2 k
Technical Specifications
| Model | Package Name | Package Description | Type Number | PNP Complement |
|---|---|---|---|---|
| PDTD123EK | SOT346 | SC-59A plastic surface mounted package; 3 leads | PDTD123EK | PDTB123EK |
| PDTD123ES | SOT54 | SC-43A plastic single-ended leaded (through hole) package; 3 leads | PDTD123ES | PDTB123ES |
| PDTD123ET | SOT23 | TO-236AB plastic surface mounted package; 3 leads | PDTD123ET | PDTB123ET |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current (DC) | - | - | - | 500 | mA |
| R1 | Bias resistor 1 (input) | - | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | Bias resistor ratio | - | 0.9 | 1.0 | 1.1 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 10 | V |
| VI | Input voltage | positive | - | - | +12 | V |
| VI | Input voltage | negative | - | - | -10 | V |
| Ptot | Total power dissipation | Tamb 25 C (SOT346) | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C (SOT54) | - | - | 500 | mW |
| Ptot | Total power dissipation | Tamb 25 C (SOT23) | - | - | 250 | mW |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | SOT346 | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | SOT54 | - | - | 250 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | SOT23 | - | - | 500 | K/W |
| ICBO | Collector-base cut-off current | VCB = 40 V; IE = 0 A | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 50 V; IB = 0 A | - | - | 0.5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 2 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 50 mA | 40 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 50 mA; IB = 2.5 mA | - | - | 0.3 | V |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | 0.6 | 1.1 | 1.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA | 1.0 | 1.5 | 2.0 | V |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 100 MHz | - | 7 | - | pF |
2410121745_Nexperia-PDTD123ET-215_C552249.pdf
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