Nexperia BCX17 215 transistor PNP type for industrial switching applications and thick film circuits
Key Attributes
Model Number:
BCX17,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
80MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BCX17,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia BCX17 and BCX18 are PNP general purpose transistors designed for saturated switching and driver applications. These transistors are suitable for use in industrial service and thick and thin-film circuits. They are housed in a SOT23 plastic package and offer high current capabilities up to 500 mA and low voltage ratings up to 45 V. The NPN complement for these devices is the BCX19.
Product Attributes
- Brand: Nexperia (formerly NXP Semiconductors)
- Product Type: PNP general purpose transistors
- Package Type: SOT23 plastic surface mounted package; 3 leads
- Complementary NPN Transistor: BCX19
- Manufacturing Origin (Marking): Hong Kong, Malaysia, China
Technical Specifications
| Model | Parameter | Condition | Value | Unit |
|---|---|---|---|---|
| BCX17 / BCX18 | Collector-base voltage (VCBO) | open emitter | -50 (BCX17) / -30 (BCX18) | V |
| Collector-emitter voltage (VCEO) | open base | -45 (BCX17) / -25 (BCX18) | V | |
| Emitter-base voltage (VEBO) | open collector | -5 | V | |
| Collector current (IC) (DC) | - | -500 | mA | |
| Peak collector current (ICM) | - | -1 | A | |
| Peak base current (IBM) | - | -200 | mA | |
| Total power dissipation (Ptot) | Tamb 25 C; Note 1 | -250 | mW | |
| Storage temperature (Tstg) | - | -65 to +150 | C | |
| Junction temperature (Tj) | - | -150 | C | |
| Operating ambient temperature (Tamb) | - | -65 to +150 | C | |
| Thermal resistance (Rth(j-a)) | Note 1 | 500 | K/W | |
| BCX17 / BCX18 | Collector cut-off current (ICBO) | IE = 0; VCB = -20 V | -100 | nA |
| Collector cut-off current (ICBO) | IE = 0; VCB = -20 V; Tj = 150 C | -5 | A | |
| Emitter cut-off current (IEBO) | IC = 0; VEB = -5 V | -100 | nA | |
| DC current gain (hFE) | IC = -100 mA; VCE = -1 V | 100 to 600 | - | |
| DC current gain (hFE) | IC = -300 mA; VCE = -1 V | 70 to - | - | |
| DC current gain (hFE) | IC = -500 mA; VCE = -1 V | 40 to - | - | |
| BCX17 / BCX18 | Collector-emitter saturation voltage (VCEsat) | IC = -500 mA; IB = -50 mA | -620 | mV |
| Base-emitter voltage (VBE) | IC = -500 mA; VCE = -1 V; Note 1 | -1.2 | V | |
| Collector capacitance (Cc) | IE = Ie = 0; VCB = -10 V; f = 1 MHz | 9 | pF | |
| Transition frequency (fT) | IC = -10 mA; VCE = -5 V; f = 100 MHz | 80 | MHz |
Note 1: Transistor mounted on an FR4 printed-circuit board.
Note 1: VBE decreases by approximately 2 mV/C with increasing temperature.
2410121947_Nexperia-BCX17-215_C549656.pdf
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