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quality N Channel Power MOSFET MIRACLE POWER MPF04N65 650V 4A Fast Switching Low On Resistance Device factory
quality N Channel Power MOSFET MIRACLE POWER MPF04N65 650V 4A Fast Switching Low On Resistance Device factory

N Channel Power MOSFET MIRACLE POWER MPF04N65 650V 4A Fast Switching Low On Resistance Device

Key Attributes
Model Number: MPF04N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.7Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
610pF
Output Capacitance(Coss):
53pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
-
Mfr. Part #:
MPF04N65
Package:
TO-220F
Product Description

Product Overview

The MPF04N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. Designed for high-efficiency applications, it features a 650V breakdown voltage, a continuous drain current of 4A, and a low on-resistance (RDS(ON)) of 2.3 at 10V VGS. This MOSFET offers fast switching speeds and low Crss, making it suitable for charger and standby power applications. It is 100% avalanche tested for enhanced reliability.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: MPF Series
  • Technology: N-Channel Power MOSFET
  • Package: TO-220F

Technical Specifications

Parameter Condition Min. Typ. Max. Unit
Features
Voltage 650 V
Current 4 A
RDS(ON) VGS = 10V 2.3
Crss Low
Switching Speed Fast
Avalanche Tested 100%
Applications
Charger
Standby Power
Absolute Maximum Ratings
VDS 650 V
VGS 30 V
ID (Continuous, TC=25C) 4 A
ID (Continuous, TC=100C) 2.5 A
IDM (Pulsed) 16 A
PD (Max Power Dissipation @ TJ=25C) 33 W
EAS (Single Pulsed Avalanche Energy) d 125 mJ
TJ, TSTG (Operating and Storage Temp. Range) -55 150 C
Thermal Characteristics
RJC (Thermal Resistance, Junction-Case) Max. 3.79 C/W
RJA (Thermal Resistance, Junction-Ambient) Max. 62.5 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS (Drain-Source Breakdown Voltage) VGS = 0V, ID = 250A 650 - - V
IDSS (Zero Gate Voltage Drain Current) VDS = 650V, VGS = 0V - - 1 A
IGSS (Forward Gate Body Leakage Current) VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) (Gate Threshold Voltage) VDS = VGS, ID =250A 2 - 4 V
RDS(on) (Static Drain-Source On-Resistance) c VGS = 10V, ID =2A - 2.3 2.7
Dynamic Characteristics
Ciss (Input Capacitance) VDS = 25V, VGS = 0V, f = 1.0MHz - 610 - pF
Coss (Output Capacitance) - 53 - pF
Crss (Reverse Transfer Capacitance) - 3.5 - pF
Switching Characteristics
td(on) (Turn-On Delay Time) VDD = 325V, ID =4A, RG = 25,VGS=10V - 12.7 - ns
tr (Turn-On Rise Time) - 17.4 - ns
td(off) (Turn-Off Delay Time) - 30.9 - ns
tf (Turn-Off Fall Time) - 10.5 - ns
Gate Charge Characteristics
Qg (Total Gate Charge) VDS = 520V, ID =4A, VGS = 10V - 14.2 - nC
Qgs (Gate-Source Charge) - 5.5 - nC
Qgd (Gate-Drain Charge) - 3.8 - nC
Drain-Source Diode Characteristics
IS (Drain-Source Diode Forward Continuous Current) VGS = 0V - - 4 A
ISM (Maximum Pulsed Current) VGS = 0V - - 16 A
VSD (Drain-Source Diode Forward Voltage) VGS = 0V, IS = 4A - - 1.4 V
Trr (Body Diode Reverse Recovery Time) di/dt=100A/us, IF=4A - 264 - ns

2410122025_MIRACLE-POWER-MPF04N65_C17701976.pdf

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