circuit drivers and inverter applications powered by Nexperia PDTC123ET215 resistor equipped transistors
Key Attributes
Model Number:
PDTC123ET,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC123ET,215
Package:
SOT-23
Product Description
Product Overview
The PDTC123E series NPN resistor-equipped transistors are designed for general-purpose switching and amplification, inverter and interface circuits, and circuit drivers. These transistors feature built-in bias resistors, leading to simplified circuit designs, a reduction in component count, and decreased pick-and-place costs. The series offers various package options to suit diverse application needs.
Product Attributes
- Brand: Nexperia (formerly NXP Semiconductors)
- Product Type: NPN resistor-equipped transistors
- Bias Resistors: R1 = 2.2 k, R2 = 2.2 k
- Origin: Made in Hong Kong, Malaysia, or China (indicated by marking code)
Technical Specifications
| Model | Package | Marking Code | PNP Complement | VCEO (Max) | IO (DC) (Max) | R1 (Bias Resistor) | R2 (Bias Resistor) |
|---|---|---|---|---|---|---|---|
| PDTC123EE | SOT416 (SC-75) | 5A | PDTA123EE | -50 V | 100 mA | 2.2 k | 2.2 k |
| PDTC123EEF | SOT490 (SC-89) | 6A | PDTA123EEF | -50 V | 100 mA | 2.2 k | 2.2 k |
| PDTC123EK | SOT346 (SC-59) | 48 | PDTA123EK | -50 V | 100 mA | 2.2 k | 2.2 k |
| PDTC123EM | SOT883 (SC-101) | G1 | PDTA123EM | -50 V | 100 mA | 2.2 k | 2.2 k |
| PDTC123ES | SOT54 (TO-92 / SC-43) | TC123E | PDTA123ES | -50 V | 100 mA | 2.2 k | 2.2 k |
| PDTC123ET | SOT23 | *26(1) | PDTA123ET | -50 V | 100 mA | 2.2 k | 2.2 k |
| PDTC123EU | SOT323 (SC-70) | *48(1) | PDTA123EU | -50 V | 100 mA | 2.2 k | 2.2 k |
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCBO (Collector-Base Voltage) | Open emitter | - | - | 50 | V |
| VCEO (Collector-Emitter Voltage) | Open base | - | - | 50 | V |
| VEBO (Emitter-Base Voltage) | Open collector | - | - | 10 | V |
| VI (Input Voltage) | Positive | - | - | 12 | V |
| VI (Input Voltage) | Negative | - | - | -10 | V |
| IO (Output Current, DC) | - | - | - | 100 | mA |
| ICM (Peak Collector Current) | - | - | - | 100 | mA |
| Ptot (Total Power Dissipation) | Tamb 25 C, SOT54 (note 1) | - | - | 500 | mW |
| Ptot (Total Power Dissipation) | Tamb 25 C, SOT23 (note 1) | - | - | 250 | mW |
| Ptot (Total Power Dissipation) | Tamb 25 C, SOT346 (note 1) | - | - | 250 | mW |
| Ptot (Total Power Dissipation) | Tamb 25 C, SOT323 (note 1) | - | - | 200 | mW |
| Ptot (Total Power Dissipation) | Tamb 25 C, SOT416 (note 1) | - | - | 150 | mW |
| Ptot (Total Power Dissipation) | Tamb 25 C, SOT490 (notes 1, 2) | - | - | 250 | mW |
| Ptot (Total Power Dissipation) | Tamb 25 C, SOT883 (notes 2, 3) | - | - | 250 | mW |
| Tstg (Storage Temperature) | - | -65 | - | 150 | C |
| Tj (Junction Temperature) | - | - | - | 150 | C |
| Tamb (Operating Ambient Temperature) | - | -65 | - | 150 | C |
| Rth(j-a) (Thermal Resistance Junction-to-Ambient) | Free air, SOT54 (note 1) | - | 250 | - | K/W |
| Rth(j-a) (Thermal Resistance Junction-to-Ambient) | Free air, SOT23 (note 1) | - | 500 | - | K/W |
| Rth(j-a) (Thermal Resistance Junction-to-Ambient) | Free air, SOT346 (note 1) | - | 500 | - | K/W |
| Rth(j-a) (Thermal Resistance Junction-to-Ambient) | Free air, SOT323 (note 1) | - | 625 | - | K/W |
| Rth(j-a) (Thermal Resistance Junction-to-Ambient) | Free air, SOT416 (note 1) | - | 833 | - | K/W |
| Rth(j-a) (Thermal Resistance Junction-to-Ambient) | Free air, SOT490 (notes 1, 2) | - | 500 | - | K/W |
| Rth(j-a) (Thermal Resistance Junction-to-Ambient) | Free air, SOT883 (notes 2, 3) | - | 500 | - | K/W |
| ICBO (Collector-Base Cut-off Current) | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO (Collector-Emitter Cut-off Current) | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO (Collector-Emitter Cut-off Current) | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 50 | A |
| IEBO (Emitter-Base Cut-off Current) | VEB = 5 V; IC = 0 A | - | - | 2 | mA |
| hFE (DC Current Gain) | VCE = 5 V; IC = 20 mA | 30 | - | - | - |
| VCEsat (Collector-Emitter Saturation Voltage) | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| Vi(off) (Input-Off Voltage) | IC = 1 mA; VCE = 5 V | - | 1.2 | 0.5 | V |
| Vi(on) (Input-On Voltage) | IC = 20 mA; VCE = 0.3 V | 2 | 1.6 | - | V |
| R1 (Input Resistor) | - | 1.54 | 2.2 | 2.86 | k |
| Resistor Ratio (R1/R2) | - | 0.8 | 1 | 1.2 | - |
| Cc (Collector Capacitance) | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
Notes:
- 1. Refer to standard mounting conditions.
- 2. Reflow soldering is the only recommended soldering method.
- 3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.
2410121943_Nexperia-PDTC123ET-215_C454935.pdf
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