P Channel Enhancement Mode MOSFET MIRACLE POWER MU4001D with 40 Amp Continuous Drain Current and Low RDS
Key Attributes
Model Number:
MU4001D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
289pF
Output Capacitance(Coss):
329pF
Input Capacitance(Ciss):
3.8nF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
MU4001D
Package:
TO-252
Product Description
Product Overview
The MU4001D is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed with advanced trench technology. It offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM applications, and power management. This MOSFET is 100% EAS guaranteed and features a breakdown voltage of -40V and a continuous drain current of -40A at 25C.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Mode: P-Channel Enhancement Mode
- EAS Guaranteed: 100%
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | -40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Drain Current-Continuous (ID) TC = 25C | -40 | A | |||
| Drain Current-Continuous (ID) TC = 100C | -26 | A | |||
| Drain Current-Pulsed (IDM) | -160 | A | |||
| Maximum Power Dissipation (PD) TC = 25C | 39 | W | |||
| Single Pulsed Avalanche Energy (EAS) | 156 | mJ | |||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | 3.2 | C/W | |||
| Thermal Resistance, Junction to Ambient (RJA) | 42 | C/W | |||
| Electrical Characteristics | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = -250A | -40 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = -40V, VGS = 0V | -1.0 | A | ||
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 20V | 100 | nA | ||
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = -250A | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On- Resistance (RDS(on)) | VGS = -10V, ID = -30A | 8.3 | 10.5 | m | |
| Static Drain-Source On- Resistance (RDS(on)) | VGS = -4.5V, ID = -20A | 10.0 | 12.5 | m | |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VDS = VGS = 0V, f = 1.0MHz | TBD | |||
| Input Capacitance (Ciss) | VDS = -20V, VGS = 0V, f = 1.0MHz | 3800 | pF | ||
| Output Capacitance (Coss) | 329 | pF | |||
| Reverse Transfer Capacitance (Crss) | 289 | pF | |||
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = -20V, VGS = -10V, ID = -20A, RGEN = 2.4 | 10 | ns | ||
| Turn-On Rise Time (tr) | 82 | ns | |||
| Turn-Off Delay Time (td(off)) | 93 | ns | |||
| Turn-Off Fall Time (tf) | 74 | ns | |||
| Total Gate Charge (Qg) | VDS = -20V, VGS = -10V, ID = -20A | 68 | nC | ||
| Gate-Source Charge (Qgs) | 10 | nC | |||
| Gate-Drain Charge (Qgd) | 14 | nC | |||
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VG = VD = 0V, Force Current | -40 | A | ||
| Maximum Pulsed Current (ISM) | -160 | A | |||
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = -30A | -0.8 | -1.2 | V | |
| Body Diode Reverse Recovery Time (Trr) | IF = -30A, dIF/dt = 100A/s | 20 | ns | ||
| Body Diode Reverse Recovery Charge (Qrr) | IF = -30A, dIF/dt = 100A/s | 13 | nC | ||
2504151445_MIRACLE-POWER-MU4001D_C47361176.pdf
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