Nexperia PBSS301ND 115 20 Volt 4 Amp NPN Transistor Low Collector Emitter Saturation Voltage Device
Key Attributes
Model Number:
PBSS301ND,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.1W
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS301ND,115
Package:
SOT-457
Product Description
Nexperia PBSS301ND: 20 V, 4 A NPN Low VCEsat (BISS) Transistor
Product Overview
The Nexperia PBSS301ND is an NPN low VCEsat (BISS) transistor in a SOT457 (SC-74) surface-mounted device (SMD) plastic package. It offers a breakthrough in low collector-emitter saturation voltage and resistance, enabling high efficiency through reduced heat generation. This transistor is suitable for power management functions, charging circuits, DC-to-DC conversion, MOSFET gate driving, power switches (e.g., motors, fans), and Thin Film Transistor (TFT) backlight inverters.
Product Attributes
- Brand: Nexperia (formerly NXP Standard Product business)
- Package Type: SOT457 (SC-74)
- Transistor Type: NPN
- Complementary PNP: PBSS301PD
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 20 | V |
| IC | Collector current | Device mounted on a ceramic PCB, Al2O3, standard footprint | - | - | 4 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 15 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 4 A; IB = 400 mA; Pulse test: tp 300 s; 0.02 | - | 50 | 70 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | 20 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| IB | Base current | - | - | - | 0.8 | A |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 2 | A |
| Ptot | Total power dissipation | Tamb 25 C (Device mounted on FR4 PCB, standard footprint) | - | - | 360 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| hFE | DC current gain | VCE = 2 V; IC = 0.5 A | 300 | 450 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 0.5 A; IB = 50 mA | - | 30 | 50 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 0.5 A; IB = 50 mA | - | 0.79 | 0.85 | V |
| fT | Transition frequency | VCE = 10 V; IC = 0.1 A; f = 100 MHz | - | 100 | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | 60 | - | pF |
Ordering Information
| Type number | Package Name | Description | Version |
|---|---|---|---|
| PBSS301ND | SC-74 | Plastic surface-mounted package (TSOP6); 6 leads | SOT457 |
Marking
| Type number | Marking code |
|---|---|
| PBSS301ND | C6 |
2410121745_Nexperia-PBSS301ND-115_C551826.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
