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quality Low RDS ON 600V N Channel Power MOSFET NH NPS16N60F Suitable for SMPS UPS and LED Driver Applications factory
quality Low RDS ON 600V N Channel Power MOSFET NH NPS16N60F Suitable for SMPS UPS and LED Driver Applications factory

Low RDS ON 600V N Channel Power MOSFET NH NPS16N60F Suitable for SMPS UPS and LED Driver Applications

Key Attributes
Model Number: NPS16N60F
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
410mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.64nF@25V
Pd - Power Dissipation:
70W
Gate Charge(Qg):
-
Mfr. Part #:
NPS16N60F
Package:
TO-220F
Product Description

Product Overview

The NPS16N60F is a 600V N-Channel Enhancement Mode Power MOSFET from Niu Hang Semiconductor. It features low RDS(ON), ultra-low gate charge, and is RoHS compliant. This MOSFET is 100% UIS and RG tested, making it suitable for applications such as adapters, PCs, PD chargers, LED drivers, and switched-mode power supplies (SMPS), including Uninterruptible Power Supplies (UPS). Its robust design and electrical characteristics ensure reliable performance in demanding power applications.

Product Attributes

  • Brand: Niu Hang (NH)
  • Model: NPS16N60F
  • Compliance: RoHS Compliant
  • Testing: 100% UIS and RG Tested
  • Package Type: TO-220F

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
PRODUCT SUMMARY
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS 30 V
Continuous Drain Current ID Ta= 25 (Note 1) 16.0 A
Drain Current-Pulsed IDM TJ< 150 (Note 1) 64 A
Maximum Power Dissipation PD Ta= 25 (Note 1) 100.0 W
Power Dissipation Derating Factor above 25 DF Ta= 100 1.79 W/
Junction Temperature TJ -55 150
Storage temperature range TSTD -55 150
Avalanche Current,Single pulse IAS L= 10 mH,VDD=50V (Note 1) 12.6 A
Single Pulse Avalanche Energy EAS TJ =25 (Note 1) 794 mJ
Thermal Characteristcs
Thermal Resistance Junction to Ambient RJA (Note 2) 70 /W
Thermal Resistance Junction-Case RJC (Note 2) 28 /W
Electrical Characteristcs
Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=250uA 600 V
Temperature Coefficient BV DSS /T J VGS=0V, ID=250uA,Reference25 0.65 V/
Drain-Source Leakage Current IDSS VDS= 600V,VGS=0V 1.0 uA
Gate-Body Leakage Current IGSS VGS= 30V 100 nA
Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250uA 2.0 3.0 V
Drain-Source On Resistance RDS(ON) ID=16A, VGS=10V 0.41 0.50
Input Capacitance Ciss VDS= 25V, VGS=0V, f=1MHz 2640 pF
Output Capacitance Coss VDS= 25V, VGS=0V, f=1MHz 230 pF
Reverse Transfer Capacitance Crss VDS= 25V, VGS=0V, f=1MHz 15.0 pF
Dynamic Characteristics
Turn-On Delay Time td(on) VDS= 300V, ID= 16A, VGS= 10V, RG= 10 14 ns
Turn-On Rise Time tr VDS= 300V, ID= 16A, VGS= 10V, RG= 10 18 ns
Turn-Off Delay Time td(off) VDS= 300V, ID= 16A, VGS= 10V, RG= 10 420 ns
Turn-Off Rise Time tf VDS= 300V, ID= 16A, VGS= 10V, RG= 10 88 ns
Total Gate Charge Qg VDS= 300V, ID= 16A, VGS= 10V 54 nC
Gate-Source Charge Qgs VDS= 300V, ID= 16A, VGS= 10V 13 nC
Gate-Drain Charge Qgd VDS= 300V, ID= 16A, VGS= 10V 16 nC
Drain-Source Diode Characteristics and Maximum Ratings
Max. Diode Forward Cuurent IS VGS=0V 16 A
Max. Pulsed Forward Cuurent ISM VGS=0V 64 A
Diode Forward Voltage VSD IS= 16A, VGS=0V 0.85 1.4 V
Reverse Recovery Time trr IS= 16A, di/dt= 100 A/us 420 ns
Reverse Recovery Charge Qrr IS= 16A, di/dt= 100 A/us 4.8 C

2410121819_NH-NPS16N60F_C7427697.pdf

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