N Channel Power MOSFET NH NPS20N50C Featuring Low On Resistance and High Energy Absorption Capability
Key Attributes
Model Number:
NPS20N50C
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
240mΩ@10V;310mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
280pF
Input Capacitance(Ciss):
2.92nF
Pd - Power Dissipation:
260W
Gate Charge(Qg):
52nC
Mfr. Part #:
NPS20N50C
Package:
TO-220C
Product Description
Product Overview
The Niuhang Electronic NPS20N50C is an N-Channel Enhancement Mode Power MOSFET designed for high-reliability applications. Featuring NH's Advanced Planar DMOS Technology, it offers low Rds(on) for reduced on-state losses and high EAS for enhanced reliability, qualified according to JEDEC criteria. This MOSFET is suitable for AC/DC converters, adaptors and chargers, PC power supplies, and LED drives and lighting.
Product Attributes
- Brand: Niuhang Electronic Specification Technology Co., Ltd
- Model: NPS20N50C
- Technology: NH's Advanced Planar DMOS Technology
- Certifications: RoHS Compliant, Pb-Free
- Package Type: TO-220C
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Product Summary | |||||||
| VDS | Min.@Tj | 500 | V | ||||
| ID | Min.@Ta | 20.0 | A | ||||
| RDS(ON) | Typ.@10V | 0.24 | |||||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Voltage | VDS | 500 | V | ||||
| Gate-Source Voltage | VGS | 30 | V | ||||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 20.0 | A | |||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 12.8 | A | |||
| Drain Current-Pulse(Note 1) | TJ< 150 | IDM | 80 | A | |||
| Maximum Power Dissipation | Ta= 25 | PD | 260 | W | |||
| Power Dissipation Derating Factor | Above 25 | DF | 2.08 | W/ | |||
| Avalanche Current, Single Pulse (Note 1) | L= 10.0 mH | IAS | 15.5 | A | |||
| Single Pulse Avalanche Energy (Note 1) | L= 10.0 mH | EAS | 1201 | mJ | |||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | |||||||
| Junction Temperature | TJ | -55 | 150 | ||||
| Storage Temperature Range | TSTD | -55 | 150 | ||||
| Thermal Resistance Junction To Ambient | Still Air Environment | RJA | 62.5 | /W | |||
| Thermal Resistance Junction-Case | Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat. | RJC | 0.48 | /W | |||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BVDSS | 500 | V | |||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BVDSS/TJ | 0.59 | V/ | |||
| Drain-Source Leakage Current | VDS= 500 V,VGS=0V | IDSS | 1 | uA | |||
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | IGSS | 100 | nA | |||
| Forward Transconductance | ID= 10.0 A,VDS= 15 V | gfs | 18.0 | S | |||
| Gate Threshold Voltage | VGS= VDS ID=250uA | VGS(TH) | 2.0 | 3.0 | 4.0 | V | |
| Drain-Source On Resistance | ID= 10.0 A,VGS= 10.0 V | RDS(ON) | 0.24 | 0.30 | |||
| Drain-Source On Resistance | ID= 10.0 A,VGS= 4.5 V | RDS(ON) | 0.31 | 0.45 | |||
| Dynamic Characteristics | |||||||
| Input Capacitance | VDS= 50 V | Ciss | 2920.0 | pF | |||
| Output Capacitance | VGS= 0 V | Coss | 280.0 | pF | |||
| Reverse Transfer Capacitance | F= 1 MHZ | Crss | 16.0 | pF | |||
| Switching Parameters | |||||||
| Turn-On Delay Time | VDS= 250 V | td(on) | 34.0 | ns | |||
| Turn-On Rise Time | VGS= 10.0 V | tr | 65.0 | ns | |||
| Turn-Off Delay Time | RG= 10.0 | td(off) | 82.0 | ns | |||
| Turn-Off Rise Time | tf | 45.0 | ns | ||||
| Gate Charge Parameters | |||||||
| Total Gate Charge | VDS= 250 V | Qg | 52.0 | nC | |||
| Gate-Source Charge | VGS= 10.0 V | Qgs | 13.0 | nC | |||
| Gate-Drain Charge | ID= 10.0 A | Qgd | 19.0 | nC | |||
| Drain-Source Diode Characteristics And Maximum Ratings | |||||||
| Max. Diode Forward Current | IS | 20.0 | A | ||||
| Max. Pulsed Forward Current | ISM | 80 | A | ||||
| Diode Forward Voltage | ID= 10.0 A,VGS=0V | VSD | 0.85 | 1.5 | V | ||
| Reverse Recovery Time | ID= 10.0 A,di/dt= 100 A/us | trr | 540.0 | ns | |||
| Reverse Recovery Charge | VGS= 10.0 V,VDD= 250 V | Qrr | 5670.0 | nC | |||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | Rg | 0.0 | ||||
| Outline Drawings (TO-220C) | |||||||
| Dimension | Unit | Min. | Typ. | Max. | Inches Min. | Inches Typ. | Inches Max. |
| A | mm | 9.25 | 10.75 | 0.3642 | 0.4232 | ||
| B | mm | 1.10 | 1.65 | 0.0433 | 0.0650 | ||
| C | mm | 4.15 | 4.95 | 0.1634 | 0.1949 | ||
| D | mm | 0.25 | 0.65 | 0.0098 | 0.0256 | ||
| E | mm | 14.50 | 16.70 | 0.5709 | 0.6575 | ||
| F | mm | 8.40 | 9.95 | 0.3307 | 0.3917 | ||
| L | mm | 12.15 | 14.30 | 0.4783 | 0.5630 | ||
| H | mm | 3.00 | 3.80 | 0.1181 | 0.1496 | ||
| J | mm | 1.05 | 1.60 | 0.0413 | 0.0630 | ||
| K | mm | 0.65 | 0.95 | 0.0256 | 0.0374 | ||
| M | mm | 2.10 | 2.90 | 0.0827 | 0.1142 | ||
| O | mm | 3.20 | 4.10 | 0.1260 | 0.1614 | ||
| P | mm | 2.45 | 3.10 | 0.0965 | 0.1220 | ||
| Packing Information | |||||||
| Package Type | Package Code | Weight Approx(g/Pcs) | Package Method | Quantity (Pcs/Min. Pack.) | Quantity (Pcs/Inner Box) | Quantity (Pcs/Carton) | |
| TO-220C | P1 | 2.057 | Tube | 50 | 1000 | 5000 | |
2508201745_NH-NPS20N50C_C7427698.pdf
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