Nexperia PDTC124EU115 NPN Resistor Equipped Transistor for Control of IC Inputs and Switching Loads
Nexperia PDTC124E Series NPN Resistor-Equipped Transistors
Product Overview
The Nexperia PDTC124E series comprises NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors, which reduce component count, simplify circuit design, and lower pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847/857 series in digital applications. Key applications include control of IC inputs and switching loads.
Product Attributes
- Brand: Nexperia (formerly NXP)
- Type: NPN Resistor-Equipped Transistor (RET)
- Qualification: AEC-Q101 Qualified
- Resistor Values: R1 = 22 k, R2 = 22 k
Technical Specifications
| Model | Package | Description | VCEO (V) | IO (mA) | R1 Bias Resistor (k) | R2/R1 Bias Resistor Ratio |
|---|---|---|---|---|---|---|
| PDTC124EE | SOT416 (SC-75) | Ultra small | 50 | 100 | 15.4 - 28.6 (Typ 22) | 0.8 - 1.2 (Typ 1) |
| PDTC124EM | SOT883 (SC-101) | Leadless ultra small | 50 | 100 | 15.4 - 28.6 (Typ 22) | 0.8 - 1.2 (Typ 1) |
| PDTC124ET | SOT23 (TO-236AB) | Small | 50 | 100 | 15.4 - 28.6 (Typ 22) | 0.8 - 1.2 (Typ 1) |
| PDTC124EU | SOT323 (SC-70) | Very small | 50 | 100 | 15.4 - 28.6 (Typ 22) | 0.8 - 1.2 (Typ 1) |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI | Input voltage | Positive | - | - | 40 | V |
| VI | Input voltage | Negative | - | - | -10 | V |
| IO | Output current | - | - | - | 100 | mA |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C (PDTC124EE, SOT416) | - | - | 150 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PDTC124EM, SOT883) | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PDTC124ET, SOT23) | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PDTC124EU, SOT323) | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | PDTC124EE (SOT416) | - | - | 830 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PDTC124EM (SOT883) | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PDTC124ET (SOT23) | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PDTC124EU (SOT323) | - | - | 625 | K/W |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 180 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 60 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 1.1 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 5 mA | 2.5 | 1.7 | - | V |
| R1 | Bias resistor 1 (input) | - | 15.4 | 22 | 28.6 | k |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 230 | - | MHz |
2410121850_Nexperia-PDTC124EU-115_C552193.pdf
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