Nexperia PDTC124EU115 NPN Resistor Equipped Transistor for Control of IC Inputs and Switching Loads

Key Attributes
Model Number: PDTC124EU,115
Product Custom Attributes
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC124EU,115
Package:
SOT-323
Product Description

Nexperia PDTC124E Series NPN Resistor-Equipped Transistors

Product Overview
The Nexperia PDTC124E series comprises NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors, which reduce component count, simplify circuit design, and lower pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847/857 series in digital applications. Key applications include control of IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia (formerly NXP)
  • Type: NPN Resistor-Equipped Transistor (RET)
  • Qualification: AEC-Q101 Qualified
  • Resistor Values: R1 = 22 k, R2 = 22 k

Technical Specifications

Model Package Description VCEO (V) IO (mA) R1 Bias Resistor (k) R2/R1 Bias Resistor Ratio
PDTC124EE SOT416 (SC-75) Ultra small 50 100 15.4 - 28.6 (Typ 22) 0.8 - 1.2 (Typ 1)
PDTC124EM SOT883 (SC-101) Leadless ultra small 50 100 15.4 - 28.6 (Typ 22) 0.8 - 1.2 (Typ 1)
PDTC124ET SOT23 (TO-236AB) Small 50 100 15.4 - 28.6 (Typ 22) 0.8 - 1.2 (Typ 1)
PDTC124EU SOT323 (SC-70) Very small 50 100 15.4 - 28.6 (Typ 22) 0.8 - 1.2 (Typ 1)
Symbol Parameter Conditions Min Typ Max Unit
VCBO Collector-base voltage Open emitter - - 50 V
VCEO Collector-emitter voltage Open base - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage Positive - - 40 V
VI Input voltage Negative - - -10 V
IO Output current - - - 100 mA
ICM Peak collector current Single pulse; tp 1 ms - - 100 mA
Ptot Total power dissipation Tamb 25 C (PDTC124EE, SOT416) - - 150 mW
Ptot Total power dissipation Tamb 25 C (PDTC124EM, SOT883) - - 250 mW
Ptot Total power dissipation Tamb 25 C (PDTC124ET, SOT23) - - 250 mW
Ptot Total power dissipation Tamb 25 C (PDTC124EU, SOT323) - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient PDTC124EE (SOT416) - - 830 K/W
Rth(j-a) Thermal resistance junction to ambient PDTC124EM (SOT883) - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient PDTC124ET (SOT23) - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient PDTC124EU (SOT323) - - 625 K/W
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 180 A
hFE DC current gain VCE = 5 V; IC = 5 mA 60 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA 2.5 1.7 - V
R1 Bias resistor 1 (input) - 15.4 22 28.6 k
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz - 230 - MHz

2410121850_Nexperia-PDTC124EU-115_C552193.pdf
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