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quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU3007Y with 30V Drain Source Voltage and 160A Current factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU3007Y with 30V Drain Source Voltage and 160A Current factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MU3007Y with 30V Drain Source Voltage and 160A Current

Key Attributes
Model Number: MU3007Y
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
160A
RDS(on):
3mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
838pF
Number:
1 N-channel
Output Capacitance(Coss):
845pF
Input Capacitance(Ciss):
7.71nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
136nC@10V
Mfr. Part #:
MU3007Y
Package:
PDFN-8(5x6)
Product Description

Product Overview

The MU3007Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 30V drain-source voltage and a continuous drain current of 160A at 25C. This MOSFET offers very low on-resistance (RDS(ON) of 1.5m typ. at VGS = 10V), fast switching, 100% avalanche testing, and improved dv/dt capability. It is suitable for applications such as Load Switches, PWM applications, and Power Management.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Series: MU3007Y
  • Technology: N-Channel Enhancement Mode MOSFET
  • Revision: 1.0

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS Drain-Source Voltage - - 30 V
VGS Gate-Source Voltage - - ± 20 V
ID Drain Current-Continuous TC =25C - - 160 A
ID Drain Current-Continuous TC =100C - - 104 A
IDM Drain Current-Pulsed - - 640 A
PD Maximum Power Dissipation @ TJ =25C - - 50 W
EAS Single Pulsed Avalanche Energy d - - 625 mJ
TJ, TSTG Operating and Store Temperature Range -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance Junction-Case - - 2.5 C/W
RJA Thermal Resistance Junction-Ambient c - - 49 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1 1.6 2.2 V
RDS(on) Static Drain-Source On- Resistance c VGS = 10V, ID = 20A - 1.5 2.0 m
RDS(on) Static Drain-Source On- Resistance c VGS = 4.5V, ID = 15A - 2.2 3.0 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 30V, VGS = 0V, f = 1MHz - 7710 - pF
Coss Output Capacitance - 845 - pF
Crss Reverse Transfer Capacitance - 838 - pF
On Characteristics
td(on) Turn-On Delay Time VDS = 30V, VGS = 10V, ID = 30A, RG= 1.8 - 18 - ns
tr Turn-On Rise Time - 10 - ns
td(off) Turn-Off Delay Time - 64 - ns
tf Turn-Off Fall Time - 16 - ns
Qg Total Gate Charge VDS = 15V, VGS = 10V, ID = 30A - 136 - nC
Qgs Gate-Source Charge - 42 - nC
Qgd Gate-Drain Charge - 16 - nC
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current VGS = 0V - - 160 A
ISM Maximum Pulsed Drain- Source Diode Forward Current VGS = 0V - - 640 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, ISD = 20A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 30 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 22 - nC

2408011701_MIRACLE-POWER-MU3007Y_C34373751.pdf

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