Nexperia PBSS4120T 215 SOT23 NPN BISS Transistor with Ultra Low Collector Emitter Saturation Voltage

Key Attributes
Model Number: PBSS4120T,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
480mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS4120T,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PBSS4120T is an NPN BISS transistor in a SOT23 plastic package, designed for applications requiring ultra-low collector-emitter saturation voltage (VCEsat) and equivalent on-resistance (RCEsat). It offers high collector current capability, leading to high efficiency and reduced heat generation. This transistor serves as a cost-effective alternative to MOSFETs in specific applications, particularly in power management (DC/DC conversion, supply line switching, battery chargers, LCD backlighting) and peripheral driver scenarios (low supply voltage applications, inductive load drivers like relays, buzzers, and motors). Its PNP complement is the PBSS5120T.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23
  • Transistor Type: NPN BISS
  • PNP Complement: PBSS5120T

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VCEO Collector-emitter voltage Open base - - 20 V
IC Collector current (DC) - - - 1 A
ICM Peak collector current - - - 3 A
RCEsat Equivalent on-resistance - - - 200 m
VCEO Collector-emitter voltage Open base - - 20 V
VCBO Collector-base voltage Open emitter - - 30 V
VEBO Emitter-base voltage Open collector - - 5 V
IC Collector current (DC) - - - 1 A
ICM Peak collector current - - - 3 A
IBM Peak base current - - - 300 mA
Ptot Total power dissipation Tamb 25 C; note 1 - - 300 mW
Ptot Total power dissipation Tamb 25 C; note 2 - - 480 mW
Tstg Storage temperature - -65 - +150 C
Tj Junction temperature - - - 150 C
Tamb Operating ambient temperature - -65 - +150 C
Rth j-a Thermal resistance from junction to ambient In free air; note 1 - 417 - K/W
Rth j-a Thermal resistance from junction to ambient In free air; note 2 - 260 - K/W
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 - - 100 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 4 V; IC = 0 - - 100 nA
hFE DC current gain VCE = 2 V; IC = 100 mA 350 470 - -
hFE DC current gain VCE = 2 V; IC = 500 mA 300 450 - -
hFE DC current gain VCE = 2 V; IC = 1 A 280 420 - -
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 1 mA - - 80 mV
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA - - 110 mV
VCEsat Collector-emitter saturation voltage IC = 750 mA; IB = 15 mA - - 200 mV
VCEsat Collector-emitter saturation voltage IC = 1 A; IB = 50 mA; note 1 - - 250 mV
RCEsat Equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 - - 220 m
VBEsat Base-emitter saturation voltage IC = 1 A; IB = 100 mA; note 1 - - 1.1 V
VBEon Base-emitter turn-on voltage VCE = 2 V; IC = 100 mA - - 0.75 V
fT Transition frequency IC = 100 mA; VCE = 10 V; f = 100 MHz 100 - - MHz
Cc Collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz - - 20 pF

Dimensions (mm):

Symbol A A1 bp c D E e e1 HE Lp Q w
Min. 0.9 0.01 0.38 0.09 2.8 1.2 1.9 - - - - -
Typ. 1.1 - 0.48 0.15 3.0 1.4 2.5 0.95 - - - -
Max. - - 0.45 0.15 3.1 1.6 2.7 1.05 - - - -

Note: Dimensions are in mm.


2410010131_Nexperia-PBSS4120T-215_C455069.pdf

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