Nexperia PBSS4120T 215 SOT23 NPN BISS Transistor with Ultra Low Collector Emitter Saturation Voltage
Product Overview
The Nexperia PBSS4120T is an NPN BISS transistor in a SOT23 plastic package, designed for applications requiring ultra-low collector-emitter saturation voltage (VCEsat) and equivalent on-resistance (RCEsat). It offers high collector current capability, leading to high efficiency and reduced heat generation. This transistor serves as a cost-effective alternative to MOSFETs in specific applications, particularly in power management (DC/DC conversion, supply line switching, battery chargers, LCD backlighting) and peripheral driver scenarios (low supply voltage applications, inductive load drivers like relays, buzzers, and motors). Its PNP complement is the PBSS5120T.
Product Attributes
- Brand: Nexperia
- Package Type: SOT23
- Transistor Type: NPN BISS
- PNP Complement: PBSS5120T
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 20 | V |
| IC | Collector current (DC) | - | - | - | 1 | A |
| ICM | Peak collector current | - | - | - | 3 | A |
| RCEsat | Equivalent on-resistance | - | - | - | 200 | m |
| VCEO | Collector-emitter voltage | Open base | - | - | 20 | V |
| VCBO | Collector-base voltage | Open emitter | - | - | 30 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| IC | Collector current (DC) | - | - | - | 1 | A |
| ICM | Peak collector current | - | - | - | 3 | A |
| IBM | Peak base current | - | - | - | 300 | mA |
| Ptot | Total power dissipation | Tamb 25 C; note 1 | - | - | 300 | mW |
| Ptot | Total power dissipation | Tamb 25 C; note 2 | - | - | 480 | mW |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Operating ambient temperature | - | -65 | - | +150 | C |
| Rth j-a | Thermal resistance from junction to ambient | In free air; note 1 | - | 417 | - | K/W |
| Rth j-a | Thermal resistance from junction to ambient | In free air; note 2 | - | 260 | - | K/W |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 4 V; IC = 0 | - | - | 100 | nA |
| hFE | DC current gain | VCE = 2 V; IC = 100 mA | 350 | 470 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 500 mA | 300 | 450 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 1 A | 280 | 420 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 1 mA | - | - | 80 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA | - | - | 110 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 750 mA; IB = 15 mA | - | - | 200 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 50 mA; note 1 | - | - | 250 | mV |
| RCEsat | Equivalent on-resistance | IC = 500 mA; IB = 50 mA; note 1 | - | - | 220 | m |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 100 mA; note 1 | - | - | 1.1 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 2 V; IC = 100 mA | - | - | 0.75 | V |
| fT | Transition frequency | IC = 100 mA; VCE = 10 V; f = 100 MHz | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = Ie = 0; f = 1 MHz | - | - | 20 | pF |
Dimensions (mm):
| Symbol | A | A1 | bp | c | D | E | e | e1 | HE | Lp | Q | w |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Min. | 0.9 | 0.01 | 0.38 | 0.09 | 2.8 | 1.2 | 1.9 | - | - | - | - | - |
| Typ. | 1.1 | - | 0.48 | 0.15 | 3.0 | 1.4 | 2.5 | 0.95 | - | - | - | - |
| Max. | - | - | 0.45 | 0.15 | 3.1 | 1.6 | 2.7 | 1.05 | - | - | - | - |
Note: Dimensions are in mm.
2410010131_Nexperia-PBSS4120T-215_C455069.pdf
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