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quality NPN Transistor Nexperia NHDTC143ZUF with Integrated Resistors and 80 Volt Breakdown Voltage in SOT323 factory
quality NPN Transistor Nexperia NHDTC143ZUF with Integrated Resistors and 80 Volt Breakdown Voltage in SOT323 factory

NPN Transistor Nexperia NHDTC143ZUF with Integrated Resistors and 80 Volt Breakdown Voltage in SOT323

Key Attributes
Model Number: NHDTC143ZUF
Product Custom Attributes
Input Resistor:
4.7kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
NHDTC143ZUF
Package:
SOT-323
Product Description

Product Overview

The Nexperia NHDTC123JU/143ZU/114YU series comprises NPN Resistor-Equipped Transistors (RETs) in a compact SOT323 (SC-70) SMD plastic package. These transistors offer an 80 V breakdown voltage and a 100 mA output current capability, featuring built-in resistors that simplify circuit design, reduce component count, and lower pick-and-place costs. They are well-suited for digital applications, serving as a cost-effective alternative to the BC846 series, and are ideal for controlling IC inputs and switching loads. The series is AEC-Q101 qualified, ensuring suitability for automotive applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT323 (SC-70)
  • Qualification: AEC-Q101 Qualified

Technical Specifications

Model R1 (k) R2 (k) PNP Complement VCEO (V) IO (mA) Package
NHDTC123JU 2.2 47 NHDTA123JU 80 100 SOT323 (SC-70)
NHDTC143ZU 4.7 47 NHDTA143ZU 80 100 SOT323 (SC-70)
NHDTC114YU 10 47 NHDTA114YU 80 100 SOT323 (SC-70)
Parameter Conditions Min Typ Max Unit
Collector-emitter voltage (VCEO) Open base - - 80 V
Output current (IO) - - - 100 mA
Collector-base voltage (VCBO) Open emitter - - 80 V
Emitter-base voltage (VEBO) Open collector - - 7 V
Input voltage (VI) - NHDTC123JU - -7 - +20 V
Input voltage (VI) - NHDTC143ZU - -7 - +30 V
Input voltage (VI) - NHDTC114YU - -7 - +40 V
Collector-base breakdown voltage (V(BR)CBO) IC = 100 A; IE = 0 A 80 - - V
Collector-emitter breakdown voltage (V(BR)CEO) IC = 2 mA; IB = 0 A 80 - - V
Collector-base cut-off current (ICBO) VCB = 80 V; IE = 0 A - - 100 nA
Collector-emitter cut-off current (ICEO) VCE = 60 V; IB = 0 A - - 100 nA
Collector-emitter cut-off current (ICEO) VCE = 60 V; IB = 0 A; Tj = 150 C - - 5 A
Emitter-base cut-off current (IEBO) - NHDTC123JU VEB = 7 V; IC = 0 A - - 270 A
Emitter-base cut-off current (IEBO) - NHDTC143ZU VEB = 7 V; IC = 0 A - - 260 A
Emitter-base cut-off current (IEBO) - NHDTC114YU VEB = 7 V; IC = 0 A - - 230 A
DC current gain (hFE) VCE = 5 V; IC = 10 mA 100 - - -
Collector-emitter saturation voltage (VCEsat) IC = 10 mA; IB = 0.5 mA - - 100 mV
Off-state input voltage (VI(off)) - NHDTC123JU VCE = 5 V ; IC = 100 A - 595 500 mV
Off-state input voltage (VI(off)) - NHDTC143ZU VCE = 5 V ; IC = 100 A - 625 500 mV
Off-state input voltage (VI(off)) - NHDTC114YU VCE = 5 V ; IC = 100 A - 690 500 mV
On-state input voltage (VI(on)) - NHDTC123JU VCE = 0.3 V ; IC = 10 mA 1.2 0.81 - V
On-state input voltage (VI(on)) - NHDTC143ZU VCE = 0.3 V ; IC = 10 mA 1.4 0.95 - V
On-state input voltage (VI(on)) - NHDTC114YU VCE = 0.3 V ; IC = 10 mA 1.6 1.22 - V
Bias resistor 1 (input) (R1) - NHDTC123JU - 1.54 2.2 2.86 k
Bias resistor 1 (input) (R1) - NHDTC143ZU - 3.3 4.7 6.1 k
Bias resistor 1 (input) (R1) - NHDTC114YU - 7 10 13 k
Bias resistor ratio (R2/R1) - NHDTC123JU - 17 21 26 -
Bias resistor ratio (R2/R1) - NHDTC143ZU - 8 10 12 -
Bias resistor ratio (R2/R1) - NHDTC114YU - 3.7 4.7 5.7 -
Transition frequency (fT) VCE = 5 V; IC = 10 mA; f = 100 MHz - 170 - MHz
Collector capacitance (Cc) VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF

2410121942_Nexperia-NHDTC143ZUF_C3588870.pdf

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