P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM PK5A7BA designed for power management
Key Attributes
Model Number:
PK5A7BA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
108A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.7mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
793pF
Number:
1 P-Channel
Output Capacitance(Coss):
927pF
Pd - Power Dissipation:
69W
Input Capacitance(Ciss):
6.383nF
Gate Charge(Qg):
161nC
Mfr. Part #:
PK5A7BA
Package:
DFN-8(5.1x5.7)
Product Description
Product Overview
The PK5A7BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications requiring efficient power switching. It features low RDS(on) to minimize conduction losses and an optimized gate charge for reduced switching losses. This device is Pb-Free, Halogen-Free, and RoHS compliant.
Product Attributes
- Brand: NIKO-SEM
- Product Name: PK5A7BA
- Package Type: PDFN 5x6P
- Certifications: PbFree, Halogen Free, RoHS compliant
- Testing: 100% UIS Tested, 100% Rg Tested
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit | |
| ABSOLUTE MAXIMUM RATINGS | |||||
| Drain-Source Voltage | VDS | -20 | V | ||
| Gate-Source Voltage | VGS | ±12 | V | ||
| Continuous Drain Current | ID | TC = 25 °C | -108 | A | |
| TC = 100 °C | -68 | A | |||
| Continuous Drain Current | ID | TA = 25 °C | -24 | A | |
| TA = 70 °C | -19 | A | |||
| Pulsed Drain Current | IDM | -200 | A | ||
| Avalanche Current | IAS | L = 0.1mH | -53 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 140 | mJ | |
| Power Dissipation | PD | TC = 25 °C | 69 | W | |
| TC = 100 °C | 27 | W | |||
| Power Dissipation | PD | TA = 25 °C | 3.5 | W | |
| TA = 70 °C | 2.2 | W | |||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | ||
| PRODUCT SUMMARY | |||||
| Breakdown Voltage | V(BR)DSS | -20V | |||
| On-State Resistance | RDS(ON) | 3.5mΩ | |||
| Continuous Drain Current | ID | -108 | A | ||
| THERMAL RESISTANCE RATINGS | |||||
| Junction-to-Ambient (t ≤ 10s) | RθJA | 35 | °C / W | ||
| Junction-to-Ambient (Steady-State) | RθJA | 50 | °C / W | ||
| Junction-to-Case (Steady-State) | RθJC | 1.8 | °C / W | ||
| ELECTRICAL CHARACTERISTICS | |||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -20 | V | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -0.6 | -1.1 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±12V | ±100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -16V, VGS = 0V | -1 | µA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -10V, VGS = 0V, TJ = 125 °C | -10 | µA | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -20A | 2.6 | 3.5 | mΩ |
| VGS = -4.5V, ID = -20A | 3.1 | 4 | mΩ | ||
| VGS = -2.5V, ID = -20A | 4.3 | 5.7 | mΩ | ||
| Forward Transconductance | gfs | VDS = -5V, ID = -20A | 50 | S | |
| Input Capacitance | Ciss | VGS = 0V, VDS = -10V, f = 1MHz | 6383 | pF | |
| Output Capacitance | Coss | VGS = 0V, VDS = -10V, f = 1MHz | 927 | pF | |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -10V, f = 1MHz | 793 | pF | |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 3 | Ω | |
| Total Gate Charge | Qg | VDS = -10V, VGS = -10V , ID = -20A | 161 | nC | |
| Gate-Source Charge | Qgs | VDS = -10V, VGS = -10V , ID = -20A | 6.3 | nC | |
| Gate-Drain Charge | Qgd | VDS = -10V, VGS = -10V , ID = -20A | 21 | nC | |
| Turn-On Delay Time | td(on) | VDS = -10V, ID ≈ -20A, VGS = -10V, RGS = 6Ω | 13 | nS | |
| Rise Time | tr | VDS = -10V, ID ≈ -20A, VGS = -10V, RGS = 6Ω | 12 | nS | |
| Turn-Off Delay Time | td(off) | VDS = -10V, ID ≈ -20A, VGS = -10V, RGS = 6Ω | 350 | nS | |
| Fall Time | tf | VDS = -10V, ID ≈ -20A, VGS = -10V, RGS = 6Ω | 136 | nS | |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | |||||
| Continuous Current | IS | -53 | A | ||
| Forward Voltage | VSD | IF = -20A, VGS = 0V | -1.3 | V | |
| Reverse Recovery Time | trr | IF = -20A , dlF/dt = 100 A / μS | 75 | nS | |
| Reverse Recovery Charge | Qrr | IF = -20A , dlF/dt = 100 A / μS | 61 | nC | |
2411220546_NIKO-SEM-PK5A7BA_C3034557.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
