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quality Nexperia PDTC115ET215 NPN Resistor Equipped Transistor Designed for Inverter and Interface Circuits factory
quality Nexperia PDTC115ET215 NPN Resistor Equipped Transistor Designed for Inverter and Interface Circuits factory

Nexperia PDTC115ET215 NPN Resistor Equipped Transistor Designed for Inverter and Interface Circuits

Key Attributes
Model Number: PDTC115ET,215
Product Custom Attributes
Input Resistor:
100kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC115ET,215
Package:
SOT-23
Product Description

PDTC115E Series NPN Resistor-Equipped Transistors

Product Overview
The PDTC115E series NPN resistor-equipped transistors are designed for general-purpose switching and amplification applications. They feature built-in bias resistors (R1 = 100 k, R2 = 100 k), which simplify circuit design, reduce component count, and lower pick and place costs. These transistors are suitable for inverter and interface circuits, as well as circuit driver applications.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Type: NPN Resistor-Equipped Transistor
  • Internal Resistors: R1 = 100 k, R2 = 100 k

Technical Specifications

Model Package Marking Code PNP Complement VCEO (Max) IO (DC) (Max) R1 (Typ) R2 (Typ)
PDTC115EE SOT416 (SC-75) 46 PDTA115EE -50 V -20 mA 100 k 100 k
PDTC115EEF SOT490 (SC-89) 49 PDTA115EEF -50 V -20 mA 100 k 100 k
PDTC115EK SOT346 (SC-59) 56 PDTA115EK -50 V -20 mA 100 k 100 k
PDTC115EM SOT883 (SC-101) DV PDTA115EM -50 V -20 mA 100 k 100 k
PDTC115ES SOT54 (TO-92) TC115E PDTA115ES -50 V -20 mA 100 k 100 k
PDTC115ET SOT23 *44(1) PDTA115ET -50 V -20 mA 100 k 100 k
PDTC115EU SOT323 (SC-70) *15(1) PDTA115EU -50 V -20 mA 100 k 100 k

Limiting Values

Symbol Parameter Conditions Min. Max. Unit
VCBO Collector-base voltage Open emitter 50 V
VCEO Collector-emitter voltage Open base 50 V
VEBO Emitter-base voltage Open collector 10 V
VI Input voltage (positive) 40 V
VI Input voltage (negative) -10 V
IO Output current (DC) 20 mA
ICM Peak collector current 100 mA
Ptot Total power dissipation Tamb 25 C, SOT54 (note 1) 500 mW
Tamb 25 C, SOT23 (note 1) 250 mW
Tamb 25 C, SOT346 (note 1) 250 mW
Tamb 25 C, SOT323 (note 1) 200 mW
Tamb 25 C, SOT416 (note 1) 150 mW
Tamb 25 C, SOT883 (notes 2 and 3) 250 mW
Tamb 25 C, SOT490 (notes 1 and 2) 250 mW
Tstg Storage temperature -65 +150 C
Tj Junction temperature 150 C
Tamb Operating ambient temperature -65 +150 C

Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A 50 A
hFE DC current gain VCE = 5 V; IC = 5 mA 80
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA 150 mV
Vi(off) Input-off voltage IC = 100 A; VCE = 5 V 1.1 0.5 V
Vi(on) Input-on voltage IC = 1 mA; VCE = 0.3 V 3 1.5 V
R1 Input resistor 70 100 130 k
Cc Collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz 2.5 pF

Note: Origin can be Hong Kong (*=p), Malaysia (*=t), or China (*=W).


2410121948_Nexperia-PDTC115ET-215_C552166.pdf
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