Halogen Free Lead Free N Channel Enhancement Mode Transistor NIKO-SEM PK6D0BA PDFN 5x6P Package Device
Key Attributes
Model Number:
PK6D0BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.5mΩ@10V,13A
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
64pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
529pF@15V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
-
Mfr. Part #:
PK6D0BA
Package:
DFN-8-EP(6.1x5.2)
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor, model PK6D0BA, is designed for general-purpose applications. It features a PDFN 5x6P package and is Halogen-Free & Lead-Free.
Product Attributes
- Brand: NIKO-SEM
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
| ABSOLUTE MAXIMUM RATINGS | VDS | 30 | V | |
| VGS | 20 | V | ||
| ID | TC = 25 C | 40 | A | |
| TC = 100 C | 25 | A | ||
| Pulsed Drain Current | IDM | 80 | A | |
| Continuous Drain Current | TA = 25 C | 10 | A | |
| TA = 70 C | 8.3 | A | ||
| Avalanche Current | IAS | 21 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 22 | mJ |
| Power Dissipation | PD | TC = 25 C | 31 | W |
| TC = 100 C | 12 | W | ||
| Power Dissipation | PD | TA = 25 C | 2 | W |
| TA = 70 C | 1.3 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | C | |
| THERMAL RESISTANCE RATINGS | RJA | Junction-to-Ambient | 60 | C / W |
| RJC | Junction-to-Case | 4 | C / W | |
| ELECTRICAL CHARACTERISTICS | V(BR)DSS | VGS = 0V, ID = 250A | 30 | V |
| VGS(th) | VDS = VGS, ID = 250A | 1.3 - 2.3 | V | |
| IGSS | VDS = 0V, VGS = 20V | 100 | nA | |
| IDSS | VDS = 24V, VGS = 0V | 1 | A | |
| RDS(ON) | VGS = 4.5V, ID = 13A | 10 - 14 | m | |
| VGS = 10V, ID = 13A | 7 - 10.5 | m | ||
| gfs | VDS = 5V, ID = 13A | 42 | S | |
| Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 529 | pF |
| Coss | 142 | pF | ||
| Crss | 64 | pF | ||
| Gate Charge | Qg | VDS = 15V , VGS = 10V, ID = 13A | 10.3 | nC |
| Qgs | VGS = 4.5V | 6 | nC | |
| Qgd | 1.4 | nC | ||
| Switching Times | td(on) | VDS = 15V , ID 13A, VGS = 10V, RGEN =6 | 15 | nS |
| tr | 13 | nS | ||
| Switching Times | td(off) | 21 | nS | |
| tf | 15 | nS | ||
| SOURCE-DRAIN DIODE | IS | 25 | A | |
| VSD | IF = 13A, VGS = 0V | 1.2 | V | |
| trr | IF = 13A, dlF/dt = 100A / S | 8.2 | nS | |
| Reverse Recovery Charge | Qrr | 1.3 | nC |
2411220117_NIKO-SEM-PK6D0BA_C532982.pdf
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