Compact 60 Volt PNP Load Switch Nexperia PBLS6024D 115 for Battery Charger and Portable Applications
Key Attributes
Model Number:
PBLS6024D,115
Product Custom Attributes
Input Resistor:
28.6kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
PBLS6024D,115
Package:
SOT-457
Product Description
Product Overview
The Nexperia PBLS6024D is a 60 V, 1.5 A PNP load switch designed for efficient supply line switching and battery charger applications. This space-saving solution integrates a low VCEsat PNP transistor and an NPN Resistor-Equipped Transistor (RET) into a single SOT457 (SC-74) SMD plastic package, reducing component count and offering a low threshold voltage (<1 V) compared to MOSFETs. It is AEC-Q101 qualified, making it suitable for high-side switching of LEDs, drivers, and backlights in portable equipment.
Product Attributes
- Brand: Nexperia
- Product Number: PBLS6024D
- Package Type: TSOP6 (SOT457)
- Qualification: AEC-Q101 Qualified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| TR1; PNP low VCEsat transistor | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | -60 | V |
| IC | Collector current | - | - | - | -1.5 | A |
| ICM | Peak collector current | tp 1 ms; single pulse | - | - | -3 | A |
| RCEsat | Collector-emitter saturation resistance | IC = -1500 mA; IB = -100 mA; Tamb = 25 C [1] | - | 110 | 175 | m |
| TR2; NPN resistor-equipped transistor | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) [2] | - | 15.4 | 22 | 28.6 | k |
| R2/R1 | Bias resistor ratio [2] | - | 0.8 | 1 | 1.2 | - |
| Limiting Values | ||||||
| VCBO | Collector-base voltage | Open emitter (TR1) | - | - | -60 | V |
| VCEO | Collector-emitter voltage | Open base (TR1) | - | - | -60 | V |
| VEBO | Emitter-base voltage | Open collector (TR1) | - | - | -5 | V |
| IC | Collector current (TR1) | - | - | - | -1.5 | A |
| ICM | Peak collector current (TR1) | tp 1 ms; single pulse | - | - | -3 | A |
| IB | Base current (TR1) | - | - | - | -300 | mA |
| IBM | Peak base current (TR1) | single pulse; tp 1 ms | - | - | -1000 | mA |
| Ptot | Total power dissipation (TR1) | Tamb 25 C [1] | - | - | 370 | mW |
| Ptot | Total power dissipation (TR1) | Tamb 25 C [2] | - | - | 480 | mW |
| Ptot | Total power dissipation (TR1) | Tamb 25 C [3] | - | - | 630 | mW |
| VCBO | Collector-base voltage | Open emitter (TR2) | - | - | 50 | V |
| VCEO | Collector-emitter voltage | Open base (TR2) | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector (TR2) | - | - | 10 | V |
| VI | Input voltage (TR2) | positive | - | - | 40 | V |
| VI | Input voltage (TR2) | negative | - | - | -10 | V |
| IO | Output current (TR2) | - | - | - | 100 | mA |
| ICM | Peak collector current (TR2) | tp 1 ms; single pulse | - | - | 100 | mA |
| Ptot | Total power dissipation (TR2) | Tamb 25 C [1] | - | - | 200 | mW |
| Ptot | Total power dissipation (TR2) | Tamb 25 C [2] | - | - | 480 | mW |
| Ptot | Total power dissipation (TR2) | Tamb 25 C [3] | - | - | 590 | mW |
| Ptot | Total power dissipation (per device) | Tamb 25 C [1] | - | - | 480 | mW |
| Ptot | Total power dissipation (per device) | Tamb 25 C [2] | - | - | 590 | mW |
| Ptot | Total power dissipation (per device) | Tamb 25 C [3] | - | - | 760 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Characteristics | ||||||
| VCEsat | Collector-emitter saturation voltage | IC = -1000 mA; IB = -100 mA; Tamb = 25 C [1] (TR1) | - | 110 | 170 | m |
| RCEsat | Collector-emitter saturation resistance | IC = -1500 mA; IB = -100 mA; Tamb = 25 C [1] (TR1) | - | 110 | 175 | m |
| VBEsat | Base-emitter saturation voltage | IC = -500 mA; IB = -50 mA; Tamb = 25 C [1] (TR1) | - | -0.85 | -1 | V |
| VBEon | Base-emitter turn-on voltage | VCE = -10 V; IC = -1000 mA; Tamb = 25 C [1] (TR1) | - | -0.75 | -1.1 | V |
| td | Delay time (TR1) | VCC = -10 V; IC = -1 A; IBon = -50 mA; IBoff = 50 mA; Tamb = 25 C | - | 17 | - | ns |
| tr | Rise time (TR1) | VCC = -10 V; IC = -1 A; IBon = -50 mA; IBoff = 50 mA; Tamb = 25 C | - | 38 | - | ns |
| ton | Turn-on time (TR1) | VCC = -10 V; IC = -1 A; IBon = -50 mA; IBoff = 50 mA; Tamb = 25 C | - | 55 | - | ns |
| ts | Storage time (TR1) | VCC = -10 V; IC = -1 A; IBon = -50 mA; IBoff = 50 mA; Tamb = 25 C | - | 350 | - | ns |
| tf | Fall time (TR1) | VCC = -10 V; IC = -1 A; IBon = -50 mA; IBoff = 50 mA; Tamb = 25 C | - | 65 | - | ns |
| toff | Turn-off time (TR1) | VCC = -10 V; IC = -1 A; IBon = -50 mA; IBoff = 50 mA; Tamb = 25 C | - | 415 | - | ns |
| Cc | Collector capacitance (TR1) | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 30 | - | pF |
| fT | Transition frequency (TR1) | VCE = -10 V; IC = -50 mA; f = 100 MHz; Tamb = 25 C | - | 150 | - | MHz |
| hFE | DC current gain (TR2) | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 60 | - | - | - |
| VCEsat | Collector-emitter saturation voltage (TR2) | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 150 | mV |
| VI(off) | Off-state input voltage (TR2) | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 1.1 | 0.8 | V |
| VI(on) | On-state input voltage (TR2) | VCE = 0.3 V; IC = 5 mA; Tamb = 25 C | 2.5 | 1.7 | - | V |
| R1 | Bias resistor 1 (input) [2] (TR2) | - | 15.4 | 22 | 28.6 | k |
| R2/R1 | Bias resistor ratio [2] (TR2) | - | 0.8 | 1 | 1.2 | - |
| Cc | Collector capacitance (TR2) | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
2410121850_Nexperia-PBLS6024D-115_C551810.pdf
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