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quality Surface Mount NPN Transistor Double Resistor Equipped Nexperia PUMH13 115 for Automotive Applications factory
quality Surface Mount NPN Transistor Double Resistor Equipped Nexperia PUMH13 115 for Automotive Applications factory

Surface Mount NPN Transistor Double Resistor Equipped Nexperia PUMH13 115 for Automotive Applications

Key Attributes
Model Number: PUMH13,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
4.7kΩ
Resistor Ratio:
12
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMH13,115
Package:
SOT-363
Product Description

Product Overview

The Nexperia PEMH13 and PUMH13 are NPN/NPN double Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices integrate two NPN transistors with built-in bias resistors (R1 = 4.7 k, R2 = 47 k), simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are AEC-Q101 qualified, making them suitable for automotive applications. Key benefits include a 100 mA output current capability and a simplified circuit design. Typical applications include low current peripheral drivers and control of IC inputs, effectively replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Type: NPN/NPN double Resistor-Equipped Transistors (RET)
  • Certifications: AEC-Q101 qualified
  • Resistor Values: R1 = 4.7 k, R2 = 47 k

Technical Specifications

Model Package Package Configuration Description R1 Bias Resistor (Input) R2/R1 Bias Resistor Ratio Output Current (IO) Collector-Emitter Voltage (VCEO)
PEMH13 SOT666 ultra small and flat lead NPN/PNP complement 3.3 - 6.1 k (Typ 4.7 k) 8 - 12 (Typ 10) - 100 mA - 50 V
PUMH13 SOT363 (SC-88) very small PNP/PNP complement 3.3 - 6.1 k (Typ 4.7 k) 8 - 12 (Typ 10) - 100 mA - 50 V
Parameter Conditions Min Typ Max Unit
Collector-Base Voltage (VCBO) open emitter - - 50 V
Collector-Emitter Voltage (VCEO) open base - - 50 V
Emitter-Base Voltage (VEBO) open collector - - 5 V
Input Voltage (VI) positive - - 30 V
Input Voltage (VI) negative - - -5 V
Output Current (IO) - - - 100 mA
Peak Collector Current (ICM) single pulse; tp 1 ms - - 100 mA
Total Power Dissipation (Ptot) Tamb 25 C (PEMH13 SOT666) - - 200 mW
Total Power Dissipation (Ptot) Tamb 25 C (PUMH13 SOT363) - - 200 mW
Total Power Dissipation (Ptot) Tamb 25 C (Per device PEMH13 SOT666) - - 300 mW
Total Power Dissipation (Ptot) Tamb 25 C (Per device PUMH13 SOT363) - - 300 mW
Junction Temperature (Tj) - - - 150 C
Ambient Temperature (Tamb) - -65 - 150 C
Storage Temperature (Tstg) - -65 - 150 C
Collector-Base Cut-off Current (ICBO) VCB = 50 V; IE = 0 A - - 100 nA
Collector-Emitter Cut-off Current (ICEO) VCE = 30 V; IB = 0 A - - 1 A
Collector-Emitter Cut-off Current (ICEO) VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
Emitter-Base Cut-off Current (IEBO) VEB = 5 V; IC = 0 A - - 170 A
DC Current Gain (hFE) VCE = 5 V; IC = 10 mA 100 - - -
Collector-Emitter Saturation Voltage (VCEsat) IC = 5 mA; IB = 0.25 mA - - 100 mV
Off-State Input Voltage (VI(off)) VCE = 5 V; IC = 100 A - 0.6 0.5 V
On-State Input Voltage (VI(on)) VCE = 0.3 V; IC = 5 mA 1.3 0.9 - V
Collector Capacitance (Cc) VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF
Transition Frequency (fT) VCE = 5 V; IC = 10 mA; f = 100 MHz - 230 - MHz

2410121847_Nexperia-PUMH13-115_C426875.pdf

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