NIKO-SEM PE600BA N Channel MOSFET with PDFN 3x3P Package Featuring Halogen Free and Lead Free Certifications
Key Attributes
Model Number:
PE600BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.8mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
620pF@15V
Pd - Power Dissipation:
3.5W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
PE600BA
Package:
DFN-8(3x3)
Product Description
Product Overview
The PE600BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features a 30V Drain-Source Voltage, a low 9.8m On-State Resistance, and a high continuous drain current of 32A. This transistor is available in a PDFN 3x3P package, offering Halogen-Free & Lead-Free compliance.
Product Attributes
- Brand: NIKO-SEM
- Package: PDFN 3x3P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC = 25 °C | 32 | A | ||
| Continuous Drain Current | ID | TC = 100 °C | 20 | A | ||
| Continuous Drain Current | ID | TA = 25 °C | 14 | A | ||
| Continuous Drain Current | ID | TA = 70 °C | 11 | A | ||
| Pulsed Drain Current | IDM | 90 | A | |||
| Avalanche Current | IAS | 18.5 | A | |||
| Avalanche Energy | EAS | L = 0.1mH | 17 | mJ | ||
| Power Dissipation | PD | TC = 25 °C | 17.8 | W | ||
| Power Dissipation | PD | TC = 100 °C | 7 | W | ||
| Power Dissipation | PD | TA = 25 °C | 3.5 | W | ||
| Power Dissipation | PD | TA = 70 °C | 2.3 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient | RθJA | t ≤10s | 35 | °C / W | ||
| Junction-to-Ambient | RθJA | Steady-State | 75 | °C / W | ||
| Junction-to-Case | RθJC | Steady-State | 7 | °C / W | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 | 1.75 | 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 55 °C | 10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 9A | 10.2 | 14 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 9A | 7.8 | 9.8 | mΩ | |
| Forward Transconductance | gfs | VDS = 10V, ID = 9A | 35 | S | ||
| DYNAMIC | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 620 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 108 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 77 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 2.5 | Ω | ||
| Total Gate Charge | Qg(VGS=10V) | VDS = 15V , ID = 9A | 14 | nC | ||
| Total Gate Charge | Qg(VGS=4.5V) | VDS = 15V , ID = 9A | 8 | nC | ||
| Gate-Source Charge | Qgs | VDS = 15V , ID = 9A | 2 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 15V , ID = 9A | 3.8 | nC | ||
| Turn-On Delay Time | td(on) | VDD = 15V ID & 9A, VGEN = 10V, RG =6Ω | 13 | nS | ||
| Rise Time | tr | VDD = 15V ID & 9A, VGEN = 10V, RG =6Ω | 37 | nS | ||
| Turn-Off Delay Time | td(off) | VDD = 15V ID & 9A, VGEN = 10V, RG =6Ω | 48 | nS | ||
| Fall Time | tf | VDD = 15V ID & 9A, VGEN = 10V, RG =6Ω | 25 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 16 | A | |||
| Forward Voltage | VSD | IF = 9A, VGS = 0V | 1.1 | V | ||
| Reverse Recovery Time | trr | IF = 9A , dlF/dt = 100A / µS | 12 | nS | ||
| Reverse Recovery Charge | Qrr | IF = 9A , dlF/dt = 100A / µS | 3 | nC | ||
2411220222_NIKO-SEM-PE600BA_C532973.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
