Transistor N channel enhancement mode NIKO SEM PD632BA ideal for power switching electronic circuits
Key Attributes
Model Number:
PD632BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.7mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
234pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.189nF@15V
Pd - Power Dissipation:
73W
Gate Charge(Qg):
44.2nC@10V
Mfr. Part #:
PD632BA
Package:
TO-252-2
Product Description
PD632BA - N-Channel Enhancement Mode Field Effect Transistor
The PD632BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers high performance with a low on-state resistance and significant current handling capabilities. This transistor is suitable for power switching and amplification circuits.
Product Attributes
- Brand: NIKO-SEM
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC = 25 °C | 105 | A | ||
| Continuous Drain Current | ID | TC = 100 °C | 66 | A | ||
| Pulsed Drain Current | IDM | 200 | A | |||
| Avalanche Current | IAS | 40 | A | |||
| Avalanche Energy | EAS | L = 0.1mH | 80 | mJ | ||
| Power Dissipation | PD | TC = 25 °C | 73 | W | ||
| Power Dissipation | PD | TC = 100 °C | 29 | W | ||
| Junction & Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Case | RθJC | 1.7 | °C / W | |||
| Junction-to-Ambient | RθJA | 62.5 | °C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 | 1.7 | 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 125 °C | 10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 30A | 3.4 | 4.8 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V , ID = 40A | 2.8 | 3.7 | mΩ | |
| Forward Transconductance | gfs | VDS = 5V, ID = 40A | 70 | S | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 2189 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 390 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 234 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 1.4 | Ω | ||
| Total Gate Charge | Qg(VGS=10V) | VDS = 15V , ID = 20A | 44.2 | nC | ||
| Total Gate Charge | Qg(VGS=4.5V) | VDS = 15V , ID = 20A | 23.1 | nC | ||
| Gate-Source Charge | Qgs | VDS = 15V , ID = 20A | 5.6 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 15V , ID = 20A | 10.7 | nC | ||
| Turn-On Delay Time | td(on) | VDS = 15V ID ≈ 20A, VGS = 10V, RGEN =6Ω | 25 | nS | ||
| Rise Time | tr | VDS = 15V ID ≈ 20A, VGS = 10V, RGEN =6Ω | 15 | nS | ||
| Turn-Off Delay Time | td(off) | VDS = 15V ID ≈ 20A, VGS = 10V, RGEN =6Ω | 54 | nS | ||
| Fall Time | tf | VDS = 15V ID ≈ 20A, VGS = 10V, RGEN =6Ω | 17 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 105 | A | |||
| Forward Voltage | VSD | IF = 40A, VGS = 0V | 1 | V | ||
| Reverse Recovery Time | trr | IF = 20A, dlF/dt = 100A / µS | 25 | nS | ||
| Reverse Recovery Charge | Qrr | IF = 20A, dlF/dt = 100A / µS | 11 | nC | ||
2411200132_NIKO-SEM-PD632BA_C440039.pdf
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