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quality NIKO-SEM PK6A6BA PDFN 5x6P N-Channel Enhancement Mode Field Effect Transistor Designed for Power Switching factory
quality NIKO-SEM PK6A6BA PDFN 5x6P N-Channel Enhancement Mode Field Effect Transistor Designed for Power Switching factory

NIKO-SEM PK6A6BA PDFN 5x6P N-Channel Enhancement Mode Field Effect Transistor Designed for Power Switching

Key Attributes
Model Number: PK6A6BA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
42A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
124pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.672nF@15V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
-
Mfr. Part #:
PK6A6BA
Package:
PDFNWB-8L-EP(5x6)
Product Description

NIKO-SEM PK6A6BA PDFN 5x6P N-Channel Enhancement Mode Field Effect Transistor

The PK6A6BA is a high-performance N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers a robust combination of low on-resistance and high current handling capabilities, making it suitable for power switching and amplification circuits. This transistor is Halogen-Free & Lead-Free, adhering to environmental standards.

Product Attributes

  • Brand: NIKO-SEM
  • Model: PK6A6BA
  • Package: PDFN 5x6P
  • Certifications: Halogen-Free & Lead-Free
  • Channel Type: N-Channel
  • Mode: Enhancement Mode

Technical Specifications

Parameter Symbol Conditions Limit Units
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID TC = 25 °C 42 A
Continuous Drain Current ID TC = 100 °C 26.6 A
Pulsed Drain Current IDM 100 A
Continuous Drain Current ID TA = 25 °C 11 A
Continuous Drain Current ID TA = 70 °C 9 A
Avalanche Current IAS 33.7 A
Avalanche Energy EAS L = 0.1mH 56.8 mJ
Power Dissipation PD TC = 25 °C 31 W
Power Dissipation PD TC = 100 °C 12.5 W
Power Dissipation PD TA = 25 °C 2.3 W
Power Dissipation PD TA = 70 °C 1.5 W
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient RθJA 54 °C / W
Junction-to-Case RθJC 4 °C / W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 - 2.3 V
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V 1 µA
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V, TJ = 55 °C 10 µA
Drain-Source On-State Resistance RDS(ON) VGS = 4.5V, ID = 11A 6.4 - 12 mΩ
Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 11A 5.5 - 8 mΩ
Forward Transconductance gfs VDS = 5V, ID = 11A 55 S
Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 1672 pF
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 206 pF
Reverse Transfer Capacitance Crss VGS = 0V, VDS = 15V, f = 1MHz 124 pF
Total Gate Charge Qg VDS = 15V, ID = 11A, VGS = 10V 34 nC
Gate-Source Charge Qgs VDS = 15V, ID = 11A, VGS = 10V 5.1 nC
Gate-Drain Charge Qgd VDS = 15V, ID = 11A, VGS = 10V 8.3 nC
Turn-On Delay Time td(on) VDS = 15V, ID ≈ 11A, VGS = 10V, RGEN = 6Ω 25 nS
Rise Time tr VDS = 15V, ID ≈ 11A, VGS = 10V, RGEN = 6Ω 11 nS
Turn-Off Delay Time td(off) VDS = 15V, ID ≈ 11A, VGS = 10V, RGEN = 6Ω 41 nS
Fall Time tf VDS = 15V, ID ≈ 11A, VGS = 10V, RGEN = 6Ω 12 nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current IS 24 A
Forward Voltage VSD IF = 11A, VGS = 0V 1.3 V
Reverse Recovery Time trr IF = 11A, dlF/dt = 100A / µS 19.5 nS
Reverse Recovery Charge Qrr IF = 11A, dlF/dt = 100A / µS 9.4 nC

2411220115_NIKO-SEM-PK6A6BA_C429896.pdf

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