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quality Nexperia PUMH1 115 NPN Double Transistor with Bias Resistors in Compact SOT363 Surface Mount Package factory
quality Nexperia PUMH1 115 NPN Double Transistor with Bias Resistors in Compact SOT363 Surface Mount Package factory

Nexperia PUMH1 115 NPN Double Transistor with Bias Resistors in Compact SOT363 Surface Mount Package

Key Attributes
Model Number: PUMH1,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMH1,115
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

PUMH1 is an NPN/NPN resistor-equipped double transistor (RET) housed in a compact SOT363 (SC-88) surface-mounted plastic package. It offers a 100 mA output current capability and features built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. This device is suitable for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN/NPN Resistor-Equipped Double Transistor
  • Package Type: SOT363 (SC-88)
  • Resistor Values: R1 = 22 k, R2 = 22 k

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 15.4 22 28.6 k
R2/R1 Bias resistor ratio Tamb = 25 C [1] 0.8 1 1.2 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage Positive - - 40 V
VI Input voltage Negative - -10 - V
Ptot Total power dissipation Tamb 25 C [1] - - 200 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Thermal characteristics
Rth(j-a) Thermal resistance junction to ambient In free air [1] - - 625 K/W
Rth(j-a) Thermal resistance junction to ambient Per device [1] - - 417 K/W
Characteristics
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage Tamb = 25 C 50 - - V
V(BR)EBO Emitter-base breakdown voltage IC = 0 A; IE = 100 A; Tamb = 25 C 10 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 180 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 60 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 0.8 1.1 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA; Tamb = 25 C 1.7 2.5 - V
R1 Bias resistor 1 (input) [1] 15.4 22 28.6 k
R2/R1 Bias resistor ratio Tamb = 25 C [1] 0.8 1 1.2 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] - 230 - MHz
Package Outline (SOT363)
Body dimensions - - 2.1 x 1.25 x 0.95 - - mm
Pitch - - 0.65 - - mm

2410121948_Nexperia-PUMH1-115_C553527.pdf
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