86--136 6733 2386
quality Simplify circuit design with Nexperia PDTA123ET215 PNP transistor featuring built in bias resistors factory
quality Simplify circuit design with Nexperia PDTA123ET215 PNP transistor featuring built in bias resistors factory

Simplify circuit design with Nexperia PDTA123ET215 PNP transistor featuring built in bias resistors

Key Attributes
Model Number: PDTA123ET,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA123ET,215
Package:
SOT-23
Product Description

Product Overview

The PDTA123E series comprises PNP resistor-equipped transistors designed for simplified circuit design, reduction of component count, and decreased pick and place costs. These transistors are suitable for general-purpose switching and amplification, as well as inverter and interface circuits, and circuit driver applications. They feature built-in bias resistors with typical values of R1 = 2.2 k and R2 = 2.2 k.

Product Attributes

  • Brand: NXP Semiconductors
  • Product Series: PDTA123E
  • Type: PNP resistor-equipped transistor
  • Origin (Manufacturing): Hong Kong, Malaysia, China (indicated by marking codes)

Technical Specifications

Model Package Marking Code NPN Complement Collector-Emitter Voltage (VCEO) (Max) Output Current (IO) (DC) (Max) Bias Resistor R1 (Typ.) Bias Resistor R2 (Typ.)
PDTA123EE SOT416 (SC-75) 5C PDTC123EE -50 V -100 mA 2.2 k 2.2 k
PDTA123EEF SOT490 (SC-89) 6C PDTC123EEF -50 V -100 mA 2.2 k 2.2 k
PDTA123EK SOT346 (SC-59) 42 PDTC123EK -50 V -100 mA 2.2 k 2.2 k
PDTA123EM SOT883 (SC-101) F7 PDTC123EM -50 V -100 mA 2.2 k 2.2 k
PDTA123ES SOT54 (TO-92) TA123E PDTC123ES -50 V -100 mA 2.2 k 2.2 k
PDTA123ET SOT23 *21(1) PDTC123ET -50 V -100 mA 2.2 k 2.2 k
PDTA123EU SOT323 (SC-70) *42(1) PDTC123EU -50 V -100 mA 2.2 k 2.2 k
Parameter Conditions Min. Typ. Max. Unit
Collector-base voltage (VCBO) open emitter - - -50 V
Collector-emitter voltage (VCEO) open base - - -50 V
Emitter-base voltage (VEBO) open collector - - -10 V
Input voltage (VI) positive - - +10 V
Input voltage (VI) negative - - -12 V
Output current (IO) (DC) - - - -100 mA
Peak collector current (ICM) - - - -100 mA
Total power dissipation (Ptot) Tamb 25 C, SOT54 - - 500 mW
Total power dissipation (Ptot) Tamb 25 C, SOT23 - - 250 mW
Total power dissipation (Ptot) Tamb 25 C, SOT346 - - 250 mW
Total power dissipation (Ptot) Tamb 25 C, SOT323 - - 200 mW
Total power dissipation (Ptot) Tamb 25 C, SOT416 - - 150 mW
Total power dissipation (Ptot) Tamb 25 C, SOT490 - - 250 mW
Total power dissipation (Ptot) Tamb 25 C, SOT883 - - 250 mW
Storage temperature (Tstg) - -65 - +150 C
Junction temperature (Tj) - - - 150 C
Operating ambient temperature (Tamb) - -65 - +150 C
Collector-base cut-off current (ICBO) VCB = -50 V; IE = 0 A - - -100 nA
Collector-emitter cut-off current (ICEO) VCE = -30 V; IB = 0 A - - -1 A
Collector-emitter cut-off current (ICEO) VCE = -30 V; IB = 0 A; Tj = 150 C - - -50 A
Emitter-base cut-off current (IEBO) VEB = -5 V; IC = 0 A - - -2 mA
DC current gain (hFE) VCE = -5 V; IC = -20 mA 30 - - -
Collector-emitter saturation voltage (VCEsat) IC = -10 mA; IB = -0.5 mA - - -150 mV
Input-off voltage (Vi(off)) IC = -1 mA; VCE = -5 V -1.2 - -0.5 V
Input-on voltage (Vi(on)) IC = -20 mA; VCE = -0.3 V -2 -1.6 - V
Input resistor (R1) - 1.54 2.2 2.86 k
Resistor ratio (R2/R1) - 0.8 1 1.2 -
Collector capacitance (Cc) IE = ie = 0 A; VCB = -10 V; f = 1 MHz - - 3 pF

2410121943_Nexperia-PDTA123ET-215_C426847.pdf

Related Products
quality High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers factory
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads factory
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.