Nexperia PDTC143TU115 NPN transistor designed for simplified circuit design switching and amplification

Key Attributes
Model Number: PDTC143TU,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
6.1kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC143TU,115
Package:
SOT-323
Product Description

Product Overview

The PDTC143T series NPN resistor-equipped transistors are designed for general-purpose switching and amplification, inverter and interface circuits. These transistors feature built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick and place costs. Each device includes a 4.7 k bias resistor (R1) with R2 open.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Product Type: NPN resistor-equipped transistors
  • Bias Resistor (R1): 4.7 k
  • R2: Open

Technical Specifications

Type Number Package Marking Code PNP Complement VCEO (Max) IO (DC) (Max) R1 Bias Resistor (Typ.)
PDTC143TE SOT416 (SC-75) 40 PDTA143TE 50 V 100 mA 4.7 k
PDTC143TEF SOT490 (SC-89) 11 PDTA143TEF 50 V 100 mA 4.7 k
PDTC143TK SOT346 (SC-59) 52 PDTA143TK 50 V 100 mA 4.7 k
PDTC143TM SOT883 (SC-101) DM PDTA143TM 50 V 100 mA 4.7 k
PDTC143TS SOT54 (TO-92 / SC-43) TC143T PDTA143TS 50 V 100 mA 4.7 k
PDTC143TT SOT23 (TO-236AB) *33(1) PDTA143TT 50 V 100 mA 4.7 k
PDTC143TU SOT323 (SC-70) *52(1) PDTA143TU 50 V 100 mA 4.7 k

Limiting Values

Symbol Parameter Conditions Min. Max. Unit
VCBO Collector-base voltage Open emitter 50 V
VCEO Collector-emitter voltage Open base 50 V
VEBO Emitter-base voltage Open collector 5 V
IO Output current (DC) 100 mA
ICM Collector current 100 mA
Ptot Total power dissipation Tamb 25 C, SOT54 (note 1) 500 mW
Ptot Total power dissipation Tamb 25 C, SOT23 (note 1) 250 mW
Ptot Total power dissipation Tamb 25 C, SOT346 (note 1) 250 mW
Ptot Total power dissipation Tamb 25 C, SOT323 (note 1) 200 mW
Ptot Total power dissipation Tamb 25 C, SOT490 (notes 1 and 2) 250 mW
Ptot Total power dissipation Tamb 25 C, SOT883 (notes 2 and 3) 250 mW
Ptot Total power dissipation Tamb 25 C, SOT416 (note 1) 150 mW
Tstg Storage temperature 65 +150 C
Tj Junction temperature 150 C
Tamb Operating ambient temperature 65 +150 C

Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-a) Thermal resistance junction to ambient SOT54 (note 1) 250 K/W
Rth(j-a) Thermal resistance junction to ambient SOT23 (note 1) 500 K/W
Rth(j-a) Thermal resistance junction to ambient SOT346 (note 1) 500 K/W
Rth(j-a) Thermal resistance junction to ambient SOT323 (note 1) 625 K/W
Rth(j-a) Thermal resistance junction to ambient SOT490 (notes 1 and 2) 500 K/W
Rth(j-a) Thermal resistance junction to ambient SOT883 (notes 2 and 3) 500 K/W
Rth(j-a) Thermal resistance junction to ambient SOT416 (note 1) 833 K/W
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A 100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA 200
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA 100 mV
R1 Input resistor 3.3 4.7 6.1 k
Cc Collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz 2.5 pF

Package Outlines

Refer to the datasheet for detailed package outline drawings and dimensions for SOT490, SOT346, SOT883, SOT54, SOT23, SOT323, and SOT416.

Data Sheet Status

This is a Product data sheet, indicating Production status. Please consult the most recently issued document before initiating or completing a design.

Contact Information

For additional information please visit: http://www.nexperia.com

For sales offices addresses send e-mail to: salesaddresses@nexperia.com


2410122008_Nexperia-PDTC143TU-115_C552210.pdf

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