86--136 6733 2386
quality Integrated bias resistor transistor onsemi MUN5214DW1T1G designed for compact and electronic circuit solutions factory
quality Integrated bias resistor transistor onsemi MUN5214DW1T1G designed for compact and electronic circuit solutions factory

Integrated bias resistor transistor onsemi MUN5214DW1T1G designed for compact and electronic circuit solutions

Key Attributes
Model Number: MUN5214DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
10kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MUN5214DW1T1G
Package:
SOT-363
Product Description

Product Overview

This series of Dual NPN Bias Resistor Transistors (BRT) integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. Designed to replace external bias networks, these transistors simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring unique site and control change requirements, with specific prefixes available for automotive and other demanding scenarios. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: AEC-Q101 Qualified (for S and NSV prefixes), PPAP Capable (for S and NSV prefixes)
  • Material: Pb-Free, Halogen Free/BFR Free

Technical Specifications

DevicePackageCollector-Base Voltage (VCBO)Collector-Emitter Voltage (VCEO)Collector Current (IC)Input Forward Voltage (VIN(fwd))Input Reverse Voltage (VIN(rev))R1R2
MUN5214DW1, NSBC114YDXV6, NSBC114YDP6SOT-363, SOT-563, SOT-96350 Vdc50 Vdc100 mAdc40 Vdc6 Vdc10 k47 k

2410121934_onsemi-MUN5214DW1T1G_C94403.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities factory
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
quality Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation factory
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device factory
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.