Nexperia PUMD16 115 transistor designed to reduce component count and simplify digital circuit layouts
Key Attributes
Model Number:
PUMD16,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
22kΩ
Resistor Ratio:
2.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD16,115
Package:
SOT-363
Product Description
Product Overview
The NXP PEMD16 and PUMD16 are NPN/PNP resistor-equipped transistors designed to simplify circuit design and reduce component count. These devices feature built-in bias resistors, leading to reduced pick-and-place costs. They are ideal for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.
Product Attributes
- Brand: NXP Semiconductors
Technical Specifications
| Type Number | Package | PNP/PNP Complement | NPN/NPN Complement | R1 (Bias Resistor 1) | R2/R1 (Bias Resistor Ratio) |
|---|---|---|---|---|---|
| PEMD16 | SOT666 | - | PEMB16, PEMH16 | 22 k | 47 k |
| PUMD16 | SOT363 (SC-88) | - | PUMB16, PUMH16 | 22 k | 47 k |
Key Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor; for the PNP transistor with negative polarity | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | - | 15.4 | 22 | 28.6 | k |
| R2/R1 | Bias resistor ratio | - | 1.7 | 2.1 | 2.6 | - |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 120 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 80 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 0.8 | 0.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 2 mA | 2 | 1.1 | - | V |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
2410121745_Nexperia-PUMD16-115_C553510.pdf
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