Digital transistor onsemi SMUN5335DW1T1G with monolithic bias network designed to reduce component count
Key Attributes
Model Number:
SMUN5335DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
2.2kΩ
Resistor Ratio:
0.047
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
SMUN5335DW1T1G
Package:
SC-88
Product Description
Product Overview
This series of digital transistors integrates a single transistor with a monolithic bias network, consisting of a base resistor and a base-emitter resistor. Designed to replace individual components and external resistor networks, these Bias Resistor Transistors (BRTs) simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring unique site and control change requirements, with S and NSV prefixes qualifying for AEC-Q101 and PPAP capabilities.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S and NSV prefixes)
- Compliance: Pb-Free, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Model | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) - Continuous | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 |
| DTC123JP/D, MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 | SOT-363, SOT-563, SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 12 Vdc | 5 Vdc | 2.2 k | 47 k |
| Model | Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| MUN5335DW1 (SOT-363) | Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 6, IC = 2.0 mA, IB = 0 | |
| DC Current Gain | hFE | 80 | 140 | - | - | Note 6, IC = 5.0 mA, VCE = 10 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | Note 6, IC = 10 mA, IB = 0.3 mA | |
| Input Voltage (Off) | Vi(off) | - | - | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | |
| Input Voltage (On) | Vi(on) | - | - | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | k | ||
| NSBC123JPDXV6 (SOT-563) | Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 6, IC = 2.0 mA, IB = 0 | |
| DC Current Gain | hFE | 80 | 140 | - | - | Note 6, IC = 5.0 mA, VCE = 10 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | Note 6, IC = 10 mA, IB = 0.3 mA | |
| Input Voltage (Off) | Vi(off) | - | - | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | |
| Input Voltage (On) | Vi(on) | - | - | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | k | ||
| NSBC123JPDP6 (SOT-963) | Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 6, IC = 2.0 mA, IB = 0 | |
| DC Current Gain | hFE | 80 | 140 | - | - | Note 6, IC = 5.0 mA, VCE = 10 V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc | Note 6, IC = 10 mA, IB = 0.3 mA | |
| Input Voltage (Off) | Vi(off) | - | - | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | |
| Input Voltage (On) | Vi(on) | - | - | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | |
| Input Resistor | R1 | 1.5 | 2.2 | 2.9 | k |
| Package | Characteristic | Symbol | Max | Unit | Notes |
| MUN5335DW1 (SOT-363) | Total Device Dissipation (One Junction Heated) | PD | 187 | mW | TA = 25C, Note 1, 2 |
| Derate above 25C (One Junction Heated) | 1.5 | mW/C | Note 1, 2 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 670 | C/W | Note 1, 2 | |
| Total Device Dissipation (Both Junctions Heated) | PD | 250 | mW | TA = 25C, Note 1, 2, 3 | |
| Derate above 25C (Both Junctions Heated) | 2.0 | mW/C | Note 1, 2, 3 | ||
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 493 | C/W | Note 1, 2, 3 | |
| Thermal Resistance, Junction to Lead | RJL | 188 | C/W | Note 1, 2 | |
| Junction and Storage Temperature Range | TJ, Tstg | 150 | C | 55 to +150 | |
| Total Device Dissipation (One Junction Heated) | PD | 256 | mW | TA = 25C, Note 1, 2 | |
| Derate above 25C (One Junction Heated) | 2.0 | mW/C | Note 1, 2 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 490 | C/W | Note 1, 2 | |
| Thermal Resistance, Junction to Lead | RJL | 208 | C/W | Note 1, 2 | |
| NSBC123JPDXV6 (SOT-563) | Total Device Dissipation (One Junction Heated) | PD | 357 | mW | TA = 25C, Note 1 |
| Derate above 25C (One Junction Heated) | 2.9 | mW/C | Note 1 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 350 | C/W | Note 1 | |
| Total Device Dissipation (Both Junctions Heated) | PD | 500 | mW | TA = 25C, Note 1, 3 | |
| Derate above 25C (Both Junctions Heated) | 4.0 | mW/C | Note 1, 3 | ||
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 250 | C/W | Note 1, 3 | |
| Junction and Storage Temperature Range | TJ, Tstg | 150 | C | 55 to +150 | |
| NSBC123JPDP6 (SOT-963) | Total Device Dissipation (One Junction Heated) | PD | 231 | mW | TA = 25C, Note 4, 5 |
| Derate above 25C (One Junction Heated) | 1.9 | mW/C | Note 4, 5 | ||
| Thermal Resistance, Junction to Ambient (One Junction Heated) | RJA | 540 | C/W | Note 4, 5 | |
| Total Device Dissipation (Both Junctions Heated) | PD | 339 | mW | TA = 25C, Note 4, 5, 3 | |
| Derate above 25C (Both Junctions Heated) | 2.7 | mW/C | Note 4, 5, 3 | ||
| Thermal Resistance, Junction to Ambient (Both Junctions Heated) | RJA | 369 | C/W | Note 4, 5, 3 | |
| Junction and Storage Temperature Range | TJ, Tstg | 150 | C | 55 to +150 | |
2410121854_onsemi-SMUN5335DW1T1G_C894412.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
